Structural, optical and electrical properties of Mg-doped CuCrO2 thin films by sol–gel processing
Yunfeng Wang,Yijing Gu,Tao Wang,Wangzhou Shi
DOI: https://doi.org/10.1016/j.jallcom.2011.02.175
IF: 6.2
2011-01-01
Journal of Alloys and Compounds
Abstract:CuCr 1− x Mg x O 2 ( x = 0, 0.03, 0.05, 0.07) thin films were prepared on sapphire substrates by sol–gel processing. The effect of Mg concentrations on the structural, morphological, electrical and optical properties was investigated. Highly transparent ≧70% Mg-doped CuCrO 2 thin films with p-type conduction and semiconductor behavior were obtained. The microstructure of the systems was characterized by scanning electron microscopy and the roughness increased as the content of Mg increased. The photoluminescence spectra results indicated that it had a green luminescent emission peak at the 530 nm. In this paper, CuCr 0.95 Mg 0.05 O 2 film has the lowest resistivity of 7.34 Ω cm with direct band gap of 3.11 eV. In order to investigate the conduction mechanism, the energy band of the CuCrO 2 films is constructed based on the grain-boundary scattering. Keywords Sol–gel Delafossites CuCrO 2 Transparent conductive oxide 1 Introduction Thin films of transparent wide band gap n- and p-type oxide semiconductors are of much technological interest for ultraviolet (UV) optoelectronics and transparent bipolar electronics applications [1] . The visibly transparent and short wavelength absorbing p–n junction is the basic device structure in order to fabricate light emitting and solid state UV laser diodes, transparent transistors for advanced active matrix flat panel displays and in solar cells for utilizing the UV component of Sun radiation [2–4] . However, almost all of the well-known transparent conducting oxides (TCOs) such as Al-doped ZnO [5,6] , Sn-doped In 2 O 3 [7] and F-doped SnO 2 [8,9] are n-type semiconductor oxide, the lack of p-type TCOs severely limits the potential applications of these materials, because many of the active functions in semiconductors originate from the nature of the p–n junction. Delafossites have gained considerable attention since the discovery of p-type conductivity in transparent CuAlO 2 thin films [10] . Thus far, several Cu-base delafossites have been reported such as CuFeO 2 [11] , CuGaO 2 [12] , CuInO 2 [13] , CuScO 2 [14] , CuCrO 2 [15–17] and Mg-doped CuCrO 2 and so on [18–22] . As we all known, most delafossite films were prepared by pulsed laser deposition (PLD) [23] , sputtering [24] , electron beam evaporation [25] and chemical vapor deposition (CVD) [26,27] and so on. There are fewer reports on the sol–gel synthesis of delafossite thin films [28–30] . In this paper, we describe the preparation and optimization of Mg-doped CuCrO 2 thin films by sol–gel processing. Phase-pure CuCrO 2 were obtained after annealing at 750 °C on sapphire substrates. We have investigated the influence of Mg content on the structural, morphological, optical and electrical properties for CuCrO 2 thin film. 2 Experiment Here copper acetate monohydrate (Cu(CH 3 COO) 2 ·H 2 O >98%), chromium nitrate nonahydrate (Cr(NO 3 ) 3 ·9H 2 O >99%) and magnesium nitrate (Mg(NO 3 ) 2 ·6H 2 O >99%) were used as precursor material and 2-methoxyethanol was used as solvent respectively. Copper acetate monohydrate and chromium nitrate nonahydrate with [Cu]/[Cr] molar ratio of 1.0 were dissolved in 2-methoxyethanol first and the concentration of solution was 0.2 M. The solution was stirred at room temperature for more than 5 h in order to get a well mixed precursor solution. The films were deposited by spin coating route with a rotating speed of 1500 rpm for 5 s and 3000 rpm for 20 s. After each coating, the as-deposited films were dried in air at 400 °C for 5 min to evaporate the solvent and remove organic residuals. The procedures from coating to drying were repeated to achieve the desired thickness. Finally, the films were annealed at 750 °C for 1 h with a pressure of 10 −3 Torr. The crystal structure of the films was confirmed by conventional XRD technique with a Bruker D8 focus X’Pert diffractometer. A field emission scanning electronic microscope (FESEM) was used to determine the thickness and the surface roughness of the films by Hitachi S-4800. The photoluminescence spectrum was measured by VARIAN Cary-Eclipse 500 spectrofluorometer equipped with a 60 W Xenon lamp. The Optical transmission spectrum was investigated at 30° incidence by Aquila NKD-8000 spectrometer in the 350–1100 nm range. The dc resistivity of the film was observed with a four point probe configuration. The van-der-Pauw method was applied to measure carrier mobility and carrier density by Hall Measurement System (HMS). The Seebeck-coefficient was measured using the Physics Property Measurement System (PPMS). 3 Results and discussion 3.1 Structural properties In Fig. 1 the X-ray diffraction patterns of different Mg-doped CuCrO 2 films treated at 750 °C with a pressure of 10 −3 Torr are given. The samples of CuCr 1− x Mg x O 2 ( x = 0, x = 0.03, x = 0.05, x = 0.07) are named as D0, D3, D5 and D7 respectively. It can be observed that the films are single 3R phase delafossite structure. The intensity of (0 0 6) peaks do not have evident change, but the Full Width at Half Maximum (FWHM) of diffraction peaks decreases with the increasing of Mg content (the FWHM of the sample D0–D7 are 1.308°, 1.172°, 1.008° and 0.810°, respectively), which may be due to the formation of the stresses by the difference in ion size between chromium and magnesium [31–33] . Fig. 2 shows the FESEM micrographs of the surface of all the films. The sample D0 clearly shows that some grains are decorated within the smooth matrix. The results suggest that the surface of films is relatively smooth, and the roughness increased with increasing doping concentrations. In order to estimate the thickness of the films, the cross-section FE-SEM is carried out, and the result is shown in Fig. 3 . It can be seen that the interface between the film and the sapphire substrate is distinct. The film is tightly attached to the substrates with a very homogeneous thickness of ∼103 nm in the measured range. 3.2 Optical properties Fig. 4 (a) and (b) shows photoluminescence emission spectra of the Mg-doped CuCr 1− x Mg x O 2 films on sapphire substrates. All the films show a green luminescent emission peak at the 530 nm and blue luminescent emission peaks at the 485 nm, 445 nm, 435 nm and 424 nm. The excitation wavelength is 237 nm corresponding to 5.23 eV energy and the luminescence emission peaks occur at 2.92 eV, 2.85 eV, 2.78 eV, 2.56 eV and 2.34 eV energies, respectively. The band edge emissions can be ascribed to the 3 d 9 4 s 1 and 3 d 10 intraband transitions involving Cu + ions as also reported earlier in the CuYO 2 [34] and CuLaO 2 [35] delafossite oxide insulators. The intensity of the peak at 485 nm increased and the FWHM decreased as Mg content increased. Compared to CuLaO 2 insulating oxide, CuCr 1− x Mg x O 2 semiconducting oxide luminescence peaks show shift lower in the energy position, which could be ascribed to the effect of Cr on the Cu–O interaction [36] . Compared to the La ion in CuLaO 2 , Cr ion in CuCrO 2 exerts stronger effect on Cu–O–Cr–O–Cu linkage due to a more favorable mixing of the 3 d state on Cr ion affecting the Cu–O bond distance and Cu–Cu interaction. The optical transmission spectra of CuCr 1− x Mg x O 2 ( x = 0, 0.03, 0.05, 0.07) films are investigated within the wavelength of 350–1100 nm, and the results are shown in Fig. 5 . The transmission in the visible region decreases and the absorption edge shifts to the low wavelength as the Mg concentration increases. The average optical transmittances in the visible region are about 75%, 68%, 66% and 65% for the sample D0–D7, respectively. The low transmittance of the films can be attributed to increased photon scattering by grain boundaries. From Fig. 5 , the insert shows optical absorption spectra. The absorption coefficients α can be calculated with the following formula [37] : I = I 0 e − α t , where I 0 is the incident intensity, I is the intensity of the transmitted light and t is the thickness of films. As shown in Fig. 6 , for the index of refraction ( N ), it can be observed that N almost not any influence as introduction of Mg element in high wavelength. But the N of Mg-doped sample exhibits lower than that of CuCrO 2 in visible region. The index of refraction of sample D0, D3, D5 and D7 at 550 nm is 1.94, 1.89, 1.91 and 1.94 respectively. Fig. 7 shows the direct (a) and indirect (b) band gap of sample D0–D7. The fundamental of absorption, which corresponds to electron excitation from the valance band to the conduction band, can be used to determine the nature and value of the optical band gap of the sample D0–D7. The relationship between the absorption coefficients α and the incident photon energy hv can be fitted as [30] ( α h v ) n = A ( h v − E g ) , where A is a constant, E g is the band gap of the films, hv is the photon energy, α is the absorption coefficient. For a direct allowed transition, n is 2. For an indirect allowed transition, n is 1/2. As shown in Fig. 7 (a), for the direct allowed transition, from the portion of the plot to the hv -axis it can be obtained that the optical band gaps of the samples D0–D7 are 3.15 eV, 3.12 eV, 3.11 eV and 3.10 eV, respectively. As shown in Fig. 7 (b), for the indirect allowed transition, from the portion of plot to the hv -axis it can be obtained that the optical band gap of the sample D0–D7 is 2.80 eV, 2.77 eV, 2.76 eV and 2.75 eV, respectively. 3.3 Electrical properties Fig. 8 (a) and (b) shows the temperature ( T ) variation of resistivity ( ρ ) of the sampler D0–D7 within the temperature range 150–240 K and 240–300 K, respectively. It can be seen that all the films behave like semiconductors. As shown in Table 1 , all the samples were verified p-conductivity by their positive Seebeck coefficients [29] , and the resistivity of sample D0–D7 is 54.41 Ω cm, 36.41 Ω cm, 7.34 Ω cm and 50.77 Ω cm at room temperature, respectively. The resistivity and carrier mobility of CuCr 1− x Mg x O 2 ( x = 0, x = 0.03, x = 0.05) films decrease with increasing Mg content. It also can be found that carrier concentration increases as increasing Mg content. However, the resistivity of sample D7 is higher than that of the sample D3 and D5, which could be due to the onset of compensating donor defects [21] . Fig. 9 (a) and (b) shows ln σ versus 1/ T at different temperature range. Conduction mechanism mainly is controlled by grain-boundary properties rather than others in polycrystalline films. These grain-boundaries major include high density interface state, which could capture free carrier in the crystalline and the carrier would make other carrier scattering. The high interface state also could produce space charge area on the grain boundary, so the energy band bended and the barrier Φ b formed [38] . The conductivity of sample D0–D7 at low temperature can be modeled using grain-boundary scattering mechanism, as expressed by, σ = A exp − e Φ b k T . where Φ b is grain-boundary barrier, k is Boltzmann constant and A is a constant. Grain-boundary scattering is dominant in polycrystalline films, but all the sample show a thermal activities behavior at high temperature. So σ can be well proportional to exp(− E a / kT) at high temperature [39,40] . Where k is Boltzmann constant, E a is the thermal activation energy. For the 240–300 K range, grain-boundary scattering and the thermal activation behavior coexist in the films. The energy E = E a + Φ b value of sample D0–D7 are 301 meV, 275 meV, 180 meV and 306 meV, respectively. The change of E should be due to the differences of Fermi level of CuCr 1− x Mg x O 2 films. The doping of Mg makes the Fermi level near the top of valence band. Carriers can be excited to the Fermi level from valence band [33,39] . For the 150–240 K range, grain-boundary scattering is dominant and the Φ b value of sample D0–D7 are 54 meV, 45 meV, 19 meV and 57 meV, respectively. 4 Conclusion The wide-band-gap oxide semiconductor thin films with delafossite structure were prepared by sol–gel processing. In this study, the influence of Mg content on structural, morphology, electrical and optical characteristics have been investigated. Photoluminescence emission peaks were observed at 424 nm, 435 nm, 445 nm, 485 nm and 530 nm, respectively. The result was interpreted in terms of 3 d 9 4 s 1 and 3 d 10 Cu + intraband transitions. It was observed that the films behave the characteristics of microcrystalline morphology with direct band gap of 3.15 eV, 3.12 eV, 3.11 eV and 3.10 eV, respectively. The results suggested that CuCr 0.95 Mg 0.05 O 2 films can be considered as one of the candidates for TCOs with the lowest resistivity of 7.34 Ω cm. 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