Design of Traveling Wave Electrode for High-speed Silicon Modulators

Yanyang Zhou,Linjie Zhou,Xiaomeng Sun,Jianping Chen
DOI: https://doi.org/10.1364/acpc.2012.as3b.2
2012-01-01
Abstract:We design a traveling wave electrode to drive carrier-depletion-based silicon modulators. By optimizing the electrode on top of the active region and the connection transmission line, the impedance can be matched to 50 Ohm. The 3-dB bandwidth of the modulator can be up to 40 GHz, mainly limited by the velocity mismatch.
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