High voltage low side and high side power devices based on VLD technique

MouFu Kong,Xingbi Chen

DOI: https://doi.org/10.1109/ICSICT.2012.6466709

2012-01-01

Abstract:Based on PN junction isolation and VLD techniques, high voltage low side and high side power LDMOS transistors are presented. The solution is compatible with CMOS process and BiCMOS process, and the devices are analyzed and confirmed by simulation.

What problem does this paper attempt to address?

A High Voltage Level Shifter Circuit Implemented in Single LDMOS and Its Application

WU Zhen-yu,FANG Jian,QIAO Ming,LI Zhao-ji

DOI: https://doi.org/10.3969/j.issn.1004-3365.2007.02.025

2007-01-01

Abstract:A new approach to implement high side circuit in HVIC is presented,which uses single LDMOS to implement high voltage level shifter.Based on the analysis of the circuit structure and operation principle,a power MOS-gate drive IC is designed.With major electrical characteristics similar to normal circuit at present,this approach reduces the area of layout by about 20%.Simulation with Hspice based on 6 μm CMOS-LDMOS technology indicates the feasibility of the approach.
Novel High-Voltage, High-Side and Low-Side Power Devices with a Single Control Signal

Kong Moufu,Chen Xingbi

DOI: https://doi.org/10.1088/1674-4926/34/9/094009

2013-01-01

Journal of Semiconductors

Abstract:Novel high-voltage, high-side and low-side power devices, whose control circuits are referred to as the tub, are proposed and investigated to reduce chip area and improve the reliability of high-voltage integrated circuits. By using the tub circuit to control a branch circuit consisting of a PMOS and a resistor, a pulse signal is generated to control the low-side n-LDMOS after being processed by a low-voltage circuit. Thus, the high-voltage level-shifting circuit is not needed any more, and the parasitic effect of the conventional level-shifting circuit is eliminated. Moreover, the specific on-resistance of the proposed low-side device is reduced by more than 14.3% compared with the conventional one. In the meantime, integrated low-voltage power supplies for the low-voltage circuit and the tub circuit are also proposed. Simulations are performed with MEDICI and SPICE, and the results show that the expectant functions are achieved well.
A novel dual gated lateral MOS-bipolar power device

s hardikar,e m sankara narayanan,m m de souza,alex q huang,g a j amaratunga

DOI: https://doi.org/10.1109/ISPSD.1999.764113

1999-01-01

Abstract:A novel CMOS compatible lateral dual gated MOS-bipolar transistor (DGMBT) is demonstrated through experiments. The device is configured by a parallel combination of an LDMOS and an LIGBT. The device can be made to operate in different modes by controlling the low voltage bias on the LDMOS and the LIGBT gates. In the mixed mode, unlike an anode shorted LIGBT, this device shows a smooth transition from the MOSFET mode to a bipolar mode without any snapback. By controlling the gate bias at the LIGBT end, the level of injection can be controlled. The anode short ensures that the device turns off much faster than a conventional LIGBT
A High-Voltage Ldmos Compatible with High-Voltage Integrated Circuits on P-Type Soi Layer

Xiaorong Luo,Tianfei Lei,Yuangang Wang,Huanmei Gao,Jian Fang,Ming Qiao,Wei Zhang,Hao Deng,Bo Zhang,Zhaoji Li,Zhiqiang Xiao,Zhengcai Chen,Jing Xu

DOI: https://doi.org/10.1109/led.2009.2028249

IF: 4.8157

2009-01-01

IEEE Electron Device Letters

Abstract:Breakdown mechanism for a high-voltage n-channel LDMOS compatible with a high-voltage integrated circuit (HVIC) on a p-type silicon-on-insulator (SOI) layer is investigated theoretically and experimentally. The device is characterized by buried n-islands on a buried oxide layer (BOX). For the proposed structure, ionized donors in n-islands enhance the bottom-interface electric field of the SOI layer from 10 V/mu m in the conventional devices on p-SOI layer to 27 V/mu m, resulting in enhancement of the BOX electric field E-I from 30 to 82 V/mu m. Moreover, holes located between the depleted n-islands help to increase E-I as well. Both improve the blocking capability of the device. A 660-V SOI LDMOS is obtained, in which the implanted n-type drift region, along with the n-islands on a p-type SOI layer, realizes the self-isolation in HVIC.
Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

T Trajkovic,F Udrea,Gaj Amaratunga,Wi Milne,Ssm Chan,Pr Waind,J Thomson,De Crees

DOI: https://doi.org/10.1080/002072199132716

1999-01-01

International Journal of Electronics

Abstract:The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 8kV) applications. Such devices will be based on utilizing the advantages brought about by trench gate MOSFETs to control bipolar current flow. In this paper we give a review of development of trench gate IGBTs and we describe briefly new promising device structures based on trench technology which use PIN diode and thyristor type carrier distributions to reduce power losses within the device.
Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Fei Ma,Yan Han,Shurong Dong,Meng Miao,Jianfeng Zheng,Jian Wu,Cheng-gong Han,Kehan Zhu

DOI: https://doi.org/10.1016/j.microrel.2011.11.011

IF: 1.6

2011-01-01

Microelectronics Reliability

Abstract:This paper presents device optimization and physical analysis based on gate-grounded NMOS (GGNMOS) and n-channel lateral DMOS (nLDMOS) devices manufactured in a 0.35μm 5V/30V high-voltage BCD process. The multiple body pick-up technique has been investigated in detail for the GGNMOS, and the robustness and effectiveness of the LDMOS device is optimized by tuning the drain contact to gate space (DCGS) and increasing the body resistance. Finally, the trigger voltage walk-in effect is observed for the nLDMOS device and is studied by comprehensive simulation and TLP tests.
High Frequency 700v Powerbrane Ligbts In 0.35 Mu M Bulk Cmos Technology

T. Trajkovic,N. Udugampola,V. Pathirana,A. Mihaila,F. Udrea,G. A. J. Amaratunga,Bill Koutny,K. Ramkumar,S. Geha

DOI: https://doi.org/10.1109/ISPSD.2009.5158063

2009-01-01

Abstract:A self-isolating, lateral IGBT device with high voltage blocking capability (>700V) high on-state current density (150A/cm(2) at Vds=4V) and very fast turn-off (<50ns), realized in membrane on bulk Si technology is reported here, The device has been manufactured using a standard 5V, 0.35 mu m bulk CMOS process on 8 '' wafers with the addition of two masks: i) n-drift for the HV blocking region and ii) back-side Deep RIE (DRIE) for membrane formation. In comparison to PowerBrane on SOI, earlier reported by us [1,2], PowerBrane on bulk Si LIGBTs offer higher maximum power density due to better thermal dissipation and more robust operation including unclamped inductive switching and short circuit capability. Reliability, of bulk-Si PowerBrane chips in plastic packages has been evaluated through HTRB tests and no failures have been observed after more than 1000 hours of stress. The DRIE step used for selective removal of portions of the silicon substrate, the key feature of PowerBrane technology, offers an effective solution for isolation of the high-voltage power LIGBT(s) from the control circuitry in monolithically integrated Power Ics. In addition, use of bulk Si wafers instead of more expensive SOI substrates reduces the manufacturing costs of PowerBrane-based Power ICs without compromising performance.
A New LDMOS/LIGBT Hybrid Structure In SPIC

Xiao-an ZHU,Xue-ning LI,Jian FANG,Jian YANG,Zhao-ji LI

DOI: https://doi.org/10.3321/j.issn:0372-2112.2000.05.037

2000-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:A special LDMOS/LIGBT hybrid structure is proposed in this paper. It has both characteristics of LIGBT's strong drive ability and LDMOS's fast speed. Also, it has small substrate current and can prevent latch-up well. Using it, we can get stable signal in the wide voltage range. The results of numerical simulation and experiments demonstrate that this hybrid structure has excellent advantages for high-side and low-side signal transmissions.
A High-Voltage “Quasi-P-ldmos” Using Electrons As Carriers in Drift Region Applied for SPIC

Bo Yi,Junji Cheng,Xing Bi Chen

DOI: https://doi.org/10.1109/tpel.2017.2706021

IF: 5.967

2018-01-01

IEEE Transactions on Power Electronics

Abstract:A new type of “quasi-p-lateral diffused metal oxide semiconductor” (quasi-p-LDMOS), in which electrons are used as conductive carriers in the drift region is proposed. A floating electrode F is used in the “quasi-p-LDMOS” to transform the hole current into electron current. Then, by using an integrated low-voltage power and an inverter to control the electron current automatically, the specific on-resistance (R on,sp) is significantly reduced and the device can be successfully turned on and off. Simulation results show that the Ron,sp is 12.77 and 31 mΩ·cm 2 for a 349 and 630 V “quasi-p-LDMOS,” being only about 19.7% and 14.7% of a Triple-RESURF p-LDMOS, respectively. Moreover, the Ron,sp is even lower than that of a Triple-RESURF n-LDMOS at the same rated breakdown voltage. The figure of merit of the device is 3 to 7 times of that of state-of-the-arts. The “quasi-p-LDMOS” is designed as a low-side device in a new high-voltage CMOS circuit. By applying the “quasi-p-LDMOS” in the CMOS circuit, the total power loss is much lower than that of a conventional half-bridge circuit in a wide operating frequency. The “quasi-p-LDMOS” is suitable for smart power integrated circuit to improve both the integration level and system efficiency, and simplifies the circuit design.
200-V High-Side Thick-Layer-Soi Field Pldmos for Hv Switching Ic

Tao Liang,Yitao He,Lu,Ming Qiao,Bo Zhang

DOI: https://doi.org/10.1109/ipemc.2016.7512793

2016-01-01

Abstract:A novel high-voltage (HV) thick layer silicon-on-insulator (SOI) field p-channel lateral double-diffused metal-oxide semiconductor (pLDMOS) with single trench isolation is developed for HV switching IC based on 11-μm-thick silicon layer and 1-μm-thick buried oxide layer. The thick gate oxide layer is formed by field oxide process to endure the high voltage between the source and gate electrodes. The deep trench is adopted to realize the compatibility between HV pLDMOS and LV CMOS. The device parameters T, Y for the HV SOI field pLDMOS are optimized to reduce the device size and satisfy the off-state breakdown voltage (BV). The HV SOI field pLDMOS with a BV over 200V is experimentally realized and successfully applied to a 96-bit output driver integrated circuit (IC).
An N-channel Graded-Junction Lateral Diffused MOS Transistor in 0.18&#x03bc;m Low-Power Logic CMOS Process

Yang Liu,Bin Wang,Huaqiang Wu

DOI: https://doi.org/10.1109/isdrs.2011.6135314

2011-01-01

Abstract:Lateral Diffused MOS(LDMOS) transistors are widely used in High-Voltage(HV) applications, such as embedded Non-Volatile Memory(eNVM)[1], smart power management[2], display drivers[3] and automotive applications. They can be fabricated under various manufacturing processes such as standard CMOS technology, Bipolar-CMOS-DMOS(BCD) technology, High-Voltage CMOS technology and Silicon-On-Insulator(SOI) technology. For commercial and integration considerations, it is desirable to develop LDMOS transistors in a cheap and available process compatible with standard CMOS process. The operating voltage of such low-cost LDMOS is several tens of volts. In less-advanced i.e. micron process era, REduced SURface Freld(RESURF) technology [4] and LOCal Oxrdatron of Srhcon(LOCOS) are applied to implement LDMOS transistors with standard CMOS process[5]. However, as the dominant process has entered deep sub-micron even nanometer scale, the fabrication technology has a great change e.g. thinner gate oxide, higher doping concentration and Shallow Trench Isolation(STI) replacing LOCOS as the thick field oxide. Therefore, novel and cheaper LDMOS transistors which can be embedded into the advanced standard CMOS process are required.
High-voltage Thin Layer SOI Technology for Negative Power Supply

Ming Qiao,Yitao He,Hengjuan Wen,Xin Zhou,Lingli Jiang,Huaping Jiang,Xiaorong Luo,Zhaoji Li,Bo Zhang,Zhengcai Chen,Yuqiu Su,Zhiqiang Xiao,Cheng Wang

DOI: https://doi.org/10.1109/ispsd.2012.6229058

2012-01-01

Abstract:A novel HV thin layer SOI technology based on 1.5-μm-thick silicon layer for negative HV power supply has been first proposed. HV field nLDMOS with thick gate oxide, HV pLDMOS with thin gate oxide and LV CMOS are compatible with shallow trench isolation. Gate and source field plates are adopted to improve the breakdown characteristics of HV field nLDMOS since it doesn't meet SOI RESURF criterion. N-field with shallow junction depth is introduced to eliminate channel discontinuity around the “beak” region at the source side of HV field nLDMOS and avoid punch-through breakdown induced by BG effect of HV field nLDMOS. The influences of key parameters on breakdown mechanism are discussed and optimal parameters are obtained to achieve well characteristics of HV field nLDMOS for negative HV power supply. A negative HV switching IC using the proposed thin layer SOI technology shows that both the rise and fall times of the output stages are less than 50 ns under the negative supply voltage of -100 V and the load capacitance of 5000 pF.
High voltage SJ-pLDMOS with Variation Lateral Doping drift layer

Bo Luo,Ming Qiao,YongChun Wang,Mingliang Kou,Jun Ye,Bo Zhang,Zhaoji Li

DOI: https://doi.org/10.1109/ICCCAS.2010.5581945

2010-01-01

Abstract:This paper reports a novel Super Junction pLDMOS (SJ-pLDMOS) with charge-balanced SJ region at the surface of Variation Lateral Doping (VLD) drift region. SJ region provides a low on-resistance path in the ON-state and keeps charge balance approximately when the doping concentration of p pillars is slightly higher than that of the n pillars during the OFF-state. A significant reduction of the specific on-resistance for a given Breakdown Voltage (BV) can be achieved by using a high aspect ratio of the SJ pillars. Simulation results show that the SJ-pLDMOS with Ld of 35μm exhibits BV of 582V and Ron,SP of 210mΩ.cm2, yielding to a power Figure Of Merit (FOM) of 1.6 MW/cm2. These excellent device performances make the proposed SJ-pLDMOS a promising candidate for level shift circuit.
A Novel High Voltage Ultra-Thin SOI-LDMOS with Sectional Linearly Doped Drift Region

Wentong Zhang,Lu Li,Ming Qiao,Zhenya Zhan,Shikang Cheng,Sen Zhang,Boyong He,Xiaorong Luo,Zhaoji Li,Bo Zhang

DOI: https://doi.org/10.1109/led.2019.2919074

IF: 4.8157

2019-01-01

IEEE Electron Device Letters

Abstract:A novel high voltage ultra-thin silicon on insulator (SOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOS) with a sectional linearly doped drift region is proposed and experimentally realized in this letter. The new device features a sectional linear doping (SLD) in a 0.17 mu m SOI layer with a source field plate covering the full drift region. Low specific on-resistance R-on,R-sp is obtained by increasing the local doping concentration of the high resistance region. An analytical model is developed to provide the design guidance for the thin SOI devices with the field plate. The experimental results of the SOI SLD-LDMOS demonstrate that the new device shows a high breakdown voltage V-B of 960 V with a superior figure of merit (FOM = V-B(2)/R-on,R-sp) of 5.98 MW/cm(2) when comparing with other reported thin SOI devices. Good agreements are observed between the model and the experimental results.
300-V high-side thin-layer-SOI field pLDMOS with multiple field plates based on field implant technology

Ming Qiao,Xin Zhou,Yitao He,Hengjuan Wen,Yuanyuan Zhao,Bo Zhang,Zhaoji Li

DOI: https://doi.org/10.1109/LED.2012.2210023

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:A novel 300-V high-side thin-layer-SOI field pLDMOS adopting field implant (FI) technology and multiple field plates (MFPs) has been developed. Breakdown mechanisms of back gate (BG) punchthrough and avalanche breakdown for highside thin-layer-SOI field pLDMOS are investigated by setting up an analytic model, simulating, and verifying experimentally. Shallow junction depth of p-field achieved by t...
200-V High-Side Thick-Layer Soi Field P-Channel Ldmos with Multiple Field Plates

Tao Liang,Liwen Ding,Gang Chen,Yitao He,Yong Huang,Ming Qiao,Bo Zhang

DOI: https://doi.org/10.1016/j.spmi.2015.12.015

IF: 3.22

2016-01-01

Superlattices and Microstructures

Abstract:A high-voltage thick layer SOI field p-channel LDMOS (pLDMOS) with multiple field plates based on 11-mu m-thick silicon layer and 1-mu m-thick buried oxide layer is presented in this paper. The thick gate oxide layer is formed by field oxide process to endure the high voltage between the source and gate electrodes. The field implant (FI) technology is adopted to eliminate channel discontinuity at the bird's beak region. Multiple field plates constructed by polysilicon and metal layer are adopted to modulate electric field distribution of the depleted drift region. The SOI field pLDMOS with off-state breakdown voltage (BV) of -240 V is experimentally realized, which can be widely used for simplifying the design of level shifting. (C) 2015 Elsevier Ltd. All rights reserved.
A Novel High Voltage Soi Ldmos with Buried N-Layer in A Self-Isolation High Voltage Integrated Circuit

Xiaorong Luo,Tianfei Lei,Yuangang Wang,Bo Zhang,Florin Udrea

2010-01-01

Abstract:We propose a high voltage silicon-on-insulator (SOI) LDMOS with a Buried N-layer (BN SOI) in a self-isolation SOI high-voltage integrated circuit (HVIC). The ionized donors present in the BN enhance the interaface silicon field strength from 10V/mu m of the conventional P-SOI (CP SOI) to 30V/mu m. As a result the maximum electric field in the buried oxide before the adjacent SOI breaks down (named E-I) is increased from 30V/mu m to approx 90V/mu m. Consequently, the blocking voltage (BV) of BN SOI structure is improved by almost 50%. The one-dimensional analytical models for the breakdown voltage in BN SOI and CP SOI devices are presented. Furthermore, a combination of the P-SOI layer with the implanted N-drift region is demonstrated to have enhanced self-isolation which removes the need for deep oxide trenches in Power ICs. Finally, a test self-isolation P-SOI HVIC is fabricated to verify the proposed mechanism by using a simplified process (CMOS compatible), in which a 660V SOI LDMOS with a patterned buried n-layer is realized.
A Novel Isolation Method for Half-Bridge Power Ics

Moufu Kong,Xingbi Chen

DOI: https://doi.org/10.1109/ted.2013.2263578

IF: 3.1

2013-01-01

IEEE Transactions on Electron Devices

Abstract:A novel integrated solution for two high voltage power n-channel MOSFET transistors (NMOSTs) M-H and M-L and two level-shifting high-voltage NMOSTs M-1 and M-2 are proposed to save chip area and reduce process complexity. The optimized variation lateral doping technique is used for designing the four NMOSTs. The four NMOSTs are isolated by PN junction isolation technique to integrate together. The isolation areas between M-L and M-1 and M-1 and M-2 are needed to sustain high voltage in X-direction. Hence, the effective surface charge density distribution in the isolation areas is designed almost the same as the NMOST. The layout area of the two level-shifting high-voltage NMOSTs of the proposed solution is only 6.61% of that conventional one. The simulation results from TCAD MEDICI and DAVINCI show that the expectant functions are well achieved.
Novel High Voltage LDMOS on Partial SOI with Double-Sided Charge Trenches

Xiaorong Luo,Y. G. Wang,T. F. Lei,L. Lei,D. P. Fu,G. L. Yao,M. Qiao,Bo Zhang,Zhaoji Li

DOI: https://doi.org/10.1109/ispsd.2011.5890794

2011-01-01

Abstract:A novel partial silicon-on-insulator (PSOI) high-voltage LDMOS is proposed and its breakdown mechanism is investigated numerically and experimentally. The PSOI LDMOS features double-sided charge trenches on the top and bottom interfaces of the buried oxide (BOX) (DTPSOI). In high-voltage blocking state, the charges located in the trenches enhance the electric field strength in the BOX, and a Si window makes the substrate share the vertical voltage drop and modulates the lateral field in the SOI layer. Both increase the blocking voltage (BV). A BV>700V DTPSOI LDMOS is realized on a 8μm-thick SOI layer over the 1.2μm BOX and 1.5μm-deep trench. Moreover, the Si window alleviates the self-heating effect.
Realizing high voltage SJ-LDMOS with non-uniform N-buried layer

Wanjun Chen,Bo Zhang,Zhaoji Li

DOI: https://doi.org/10.1016/j.sse.2007.12.004

IF: 1.916

2008-01-01

Solid-State Electronics

Abstract:A novel super junction LDMOS (SJ-LDMOS) structure, which reduces substrate-assisted depletion effect, is proposed. The proposed device uses a non-uniform N-buried layer implemented between the SJ region and P substrate to achieve a uniform distribution of surface electric field. Numerical simulation results indicate that the proposed device features high breakdown voltage, low on-resistance. In addition, the proposed device is compatible with smart power technology.

High voltage low side and high side power devices based on VLD technique

A High Voltage Level Shifter Circuit Implemented in Single LDMOS and Its Application

Novel High-Voltage, High-Side and Low-Side Power Devices with a Single Control Signal

A novel dual gated lateral MOS-bipolar power device

A High-Voltage Ldmos Compatible with High-Voltage Integrated Circuits on P-Type Soi Layer

Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

High Frequency 700v Powerbrane Ligbts In 0.35 Mu M Bulk Cmos Technology

A New LDMOS/LIGBT Hybrid Structure In SPIC

A High-Voltage “Quasi-P-ldmos” Using Electrons As Carriers in Drift Region Applied for SPIC

200-V High-Side Thick-Layer-Soi Field Pldmos for Hv Switching Ic

An N-channel Graded-Junction Lateral Diffused MOS Transistor in 0.18&amp;#x03bc;m Low-Power Logic CMOS Process

High-voltage Thin Layer SOI Technology for Negative Power Supply

High voltage SJ-pLDMOS with Variation Lateral Doping drift layer

A Novel High Voltage Ultra-Thin SOI-LDMOS with Sectional Linearly Doped Drift Region

300-V high-side thin-layer-SOI field pLDMOS with multiple field plates based on field implant technology

200-V High-Side Thick-Layer Soi Field P-Channel Ldmos with Multiple Field Plates

A Novel High Voltage Soi Ldmos with Buried N-Layer in A Self-Isolation High Voltage Integrated Circuit

A Novel Isolation Method for Half-Bridge Power Ics

Novel High Voltage LDMOS on Partial SOI with Double-Sided Charge Trenches

Realizing high voltage SJ-LDMOS with non-uniform N-buried layer

An N-channel Graded-Junction Lateral Diffused MOS Transistor in 0.18μm Low-Power Logic CMOS Process