A Novel High Voltage Soi Ldmos with Buried N-Layer in A Self-Isolation High Voltage Integrated Circuit

Xiaorong Luo,Tianfei Lei,Yuangang Wang,Bo Zhang,Florin Udrea

2010-01-01

Abstract:We propose a high voltage silicon-on-insulator (SOI) LDMOS with a Buried N-layer (BN SOI) in a self-isolation SOI high-voltage integrated circuit (HVIC). The ionized donors present in the BN enhance the interaface silicon field strength from 10V/mu m of the conventional P-SOI (CP SOI) to 30V/mu m. As a result the maximum electric field in the buried oxide before the adjacent SOI breaks down (named E-I) is increased from 30V/mu m to approx 90V/mu m. Consequently, the blocking voltage (BV) of BN SOI structure is improved by almost 50%. The one-dimensional analytical models for the breakdown voltage in BN SOI and CP SOI devices are presented. Furthermore, a combination of the P-SOI layer with the implanted N-drift region is demonstrated to have enhanced self-isolation which removes the need for deep oxide trenches in Power ICs. Finally, a test self-isolation P-SOI HVIC is fabricated to verify the proposed mechanism by using a simplified process (CMOS compatible), in which a 660V SOI LDMOS with a patterned buried n-layer is realized.