A High Voltage Level Shifter Circuit Implemented in Single LDMOS and Its Application

WU Zhen-yu,FANG Jian,QIAO Ming,LI Zhao-ji

DOI: https://doi.org/10.3969/j.issn.1004-3365.2007.02.025

2007-01-01

Abstract:A new approach to implement high side circuit in HVIC is presented,which uses single LDMOS to implement high voltage level shifter.Based on the analysis of the circuit structure and operation principle,a power MOS-gate drive IC is designed.With major electrical characteristics similar to normal circuit at present,this approach reduces the area of layout by about 20%.Simulation with Hspice based on 6 μm CMOS-LDMOS technology indicates the feasibility of the approach.