Abstract:The giant piezoresistance effect (PRE) of semiconductors as featured by a high gauge factor (GF) is recognized as the prerequisite for realizing optimal pressure sensors with desired high sensitivity. In this work, we report the discovery of giant PRE in SiC nanobelts with a record GF measured using an atomic force microscope. The transverse piezoresistance coefficient along the [111] direction reaches as high as −312.51 × 10–11 pa–1 with a corresponding GF up to −1875.1, which is twice more than the highest value ever reported on SiC nanomaterials. The first-principles calculations reveal that B doping turns the acceptor states in the bandgap into deeper impurity levels, which makes the major contribution to the observed giant piezoresistance behavior. Our result provides new insights on designing pressure sensors based on SiC nanomaterials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13800?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13800</a>.Crystal structure models for calculation; HRTEM image; EDX spectrum; elemental mapping of Si and C; XPS spectrum; current within the SiC nanobelt under various compressive forces at an external bias voltage of 8 V; nanobelt resistances and applied stresses; the recorded I–V curves of two SiC nanobelts with typical thicknesses of ∼90 and ∼200 nm without applied compressive force; the relationship between the ca. piezoresistance coefficients and applied forces; piezoresistance behaviors of a single SiC nanobelt with a thickness of ∼200 nm (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13800/suppl_file/am0c13800_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

First-principles study on the piezoresistive effect of Ge/Si core/shell Nanowires

Giant Piezoresistance And Its Origin In Si(111) Nanowires: First-Principles Calculations

Piezoresistance Behaviors of Ultra-Strained SiC Nanowires

Strain Modulated Electronic Properties of Ge Nanowires - A First Principles Study

Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

Strain engineering of core–shell silicon carbide nanowires for mechanical and piezoresistive characterizations

Piezoelectric field enhancement in III–V core–shell nanowires

Giant Piezoresistance in B-Doped SiC Nanobelts with a Gauge Factor of −1800

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

Remarkable and Crystal‐Structure‐Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires

First-principles study on the piezoelectric properties of hydrogen modified graphene nanoribbons

Anisotropic and Passivation-Dependent Quantum Confinement Effects in Germanium Nanowires: a Comparison with Silicon Nanowires.

Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires

Raman spectroscopy and strain mapping in individual Ge-SixGe1-x core-shell nanowires

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

First-principles Study on Ge1−xSnx-Si Core-Shell Nanowire Transistors

Enhanced Piezoresistive Behavior of SiC Nanowire by Coupling with Piezoelectric Effect

Band structure calculations of Ge-Si core-shell nanowires

Enhanced Piezoelectric Effect in MoS2 and Surface-Engineered GaN Bilayer

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire