Novel rotary chemical mechanical polishing on an integral impeller
Longxing Liao,Zhenyu Zhang,Fanning Meng,Dongdong Liu,Jie Liu,Yubiao Li,Xiangxiang Cui
DOI: https://doi.org/10.1016/j.jmapro.2021.04.010
IF: 5.684
2021-06-01
Journal of Manufacturing Processes
Abstract:<p>Traditional polishing on an integral impeller is labour intensive owing to its complicated curved surfaces. In this study, a novel rotary chemical mechanical polishing (R-CMP) for an integral impeller has been proposed using a developed polisher and a novel CMP slurry to improve efficiency and quality as compared to the traditional polishing method. The novel slurry consists of phosphoric acid (H<sub>3</sub>PO<sub>4</sub>), hydrogen peroxide (H<sub>2</sub>O<sub>2</sub>), nicotinic acid (NA) and silicon carbide (SiC). A model for predicting the surface roughness is established, according to the R-CMP process parameters during polishing an integral impeller, which is in good agreement with experimental results. It was found out that the polishing mechanism of R-CMP consists of four processing steps: oxidation, dissolution, chelating and removal. After R-CMP on an integral impeller, the surface roughness R<sub>a</sub> of the blade root is reduced from 1.664 to 0.559 μm, and the thickness of the damage layer is decreased from 900 to 350 nm. The polishing time is 2 h, which is faster than the conventional manual polishing on an integral propeller by twenty times. The findings in this research open a new pathway to polish an integral high performance component with complicated curved surfaces using immersive CMP at high efficiency and high quality, without the need to exert external pressure.</p>
engineering, manufacturing