Abstract:The recent demonstration of the growth of two-dimensional (2D) antimony-arsenic alloys provides an additional degree of freedom to tailor the basic properties of the emerging group-V 2D materials. With this perspective, herein, we propose and conduct a comprehensive first-principles investigation on this 2D group-V antimony arsenide (2D <math> As x Sb y</math>), in both free-standing form as well as on the common substrates of Ge(111), Si(111), bilayer graphene, and bilayer hexagonal boron nitride (h-BN). Structural and electronic properties of the 2D <math> As x Sb y</math> are evaluated for different compositions, different types of atomic arrangements for each composition, and different lattice matched interfacial configurations of the composite heterostructures for the four substrates. These systematic studies provide property benchmarks for this new class of group-V 2D materials. This analysis reveals microscopic origins of the interfacial interactions, orbital hybridization, charge transfer, and the resulting electronic structures of the 2D alloy. We predict that a change in the frontier states leads to an indirect-direct bandgap transition according to atomic arrangements in the monolayer <math> As x Sb y</math>. On substrates, the relatively strong interfacial interaction between Ge or Si with <math> As x Sb y</math> suppresses the semiconducting properties exhibited in free layers, while the weak van der Waals interaction between graphene or h-BN with <math> As x Sb y</math> preserves the bands of the alloy. We conclude that 2D group-V alloys <math> As x Sb y</math> give a large material phase-space with very interesting electronic properties.

Electronically Nonalloyed State Of A Statistical Single Atomic Layer Semiconductor Alloy

Mechanism of formation of a 2D binary alloy

Atomic Order in Non-Equilibrium Silicon-Germanium-Tin Semiconductors

Double-pentagon silicon chains in a quasi-1D Si/Ag(001) surface alloy

Topological States in a Two-Dimensional Metal Alloy in Si Surface: BiAg/Si(111)- 4×4 Surface

Effective Electronic Structure of Monoclinic $β-(Al_xGa_{1-x})_2O_3$ alloy semiconductor

Interaction of Iron with the Local Environment Insigealloys Investigated with Laplace Transform Deep Level Spectroscopy

Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys

A new alloy for Al-chalcogen system: AlSe surface alloy on Al (111)

Scattering Behaviour of A Two-Dimensional Electron Gas Induced by Al Composition Fluctuation in Alxga1-Xn Barriers in Alxga1-Xn/Gan Heterostructures

Heterovalent interlayers and interface states: an ab initio study of GaAs/Si/GaAs (110) and (100) heterostructures

Alloy Shift of “No-Germanium” Iron-Related Electronic Levels in Unstrained Silicon-Germanium Alloys

Electronic Properties and Carrier Dynamics at the Alloy Interfaces of WS 2 x Se 2−2 x Spiral Nanosheets

Electronic structure and electron transport properties of amorphous alloys

Localization of Electronic States in III-V Semiconductor Alloys: A Comparative Study

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

Interaction Between Adatom-Induced Localized States and A Quasi-Two-Dimensional Electron Gas

Electronic Structure of Buried Si Layers in GaAs(001) As Studied by Soft-X-ray Emission.

Conducting Electrons in Amorphous Si Nanostructures: Coherent Interference and Metal-Insulator Transitions Mediated by Local Structures

Preparation, Structure and Properties of Two-dimensional Semiconductor Alloys

An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory