0.07mm 2, 2mW, 75MHz-IF, fourth-order BPF using source-follower-based resonator in 90nm CMOS

Yong Chen,P. I. Mak,Lei Zhang,Yan, Wang
DOI: https://doi.org/10.1049/el.2012.0579
2012-01-01
Electronics Letters
Abstract:A highly-transistorised bandpass filter (BPF) using a source-follower-based (SFB) resonator is proposed. It benefits from the advantageous properties of the source follower (e.g. no parasitic pole, linear V-GS I/O relationship, high-input and low-output impedances), while combining it with a compact and low-power grounded differential active inductor to synthesise the complex poles. Fabricated in 90 nm CMOS, a fourth-order 75 MHz-IF BPF prototype merging two such SFB resonators measures a 10 MHz bandwidth at 2 mW of power. The die size is merely 0.07 mm(2).
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