Abstract:Si 1-x Ge x alloy nanocrystals (NCs) are a class of benign semiconductors that show size and composition-tunable energy gaps and promising optical properties because of the lattice disorder. The random distribution of elements within the alloys can lead to efficient light-matter interactions, making them attractive for Si-compatible optoelectronic devices, transistors, charge storage, and memory applications. However, the fabrication of discrete, quantum-confined alloys has proven a challenging task. Herein, we report solid-state co-disproportionation of a hydrogen silsesquioxane (HSQ)/GeI 2 composite precursor to produce homogeneous Si 1-x Ge x NCs with control over diameter (5.9 ± 0.7 – 7.8 ± 1.1 nm) and composition (x = 0 – 14.4%) with strong size confinement effects and visible to near IR absorption and emission properties. As-synthesized alloys show an expanded diamond cubic Si structure, a systematic red-shift of Si-Si Raman peak, and emergence of Si-Ge/Ge-Ge peaks with increasing Ge, consistent with the admixture of isovalent elements. Surface analysis of alloys reveals Si 0 /Ge 0 core and Si n+ /Ge n+ surface species and efficient surface functionalization with alkyl ligands via thermal hydrosilylation and/or hydrogermylation. Alloy NCs exhibit absorption onsets (2.26 – 1.92 eV), indirect (1.53 – 1.80 eV) and direct (2.88 – 2.47 eV) energy gaps, and photoluminescence (PL) maxima (1.40 – 1.27 eV) that can be tuned by manipulating the diameter and/or composition. The experimental PL energies are consistent with those predicted by density functional theory (DFT) suggesting that the PL originates from NC core electronic transitions. The facile low-temperature solid-state synthesis and control over physical properties realized in this study will allow discrete Si 1-x Ge x NCs to emerge as low to nontoxic, earth-abundant, and Si-compatible nanostructures for a broad range of electronic and photonic technologies.

Nonlinear Concentration-Dependent Electronic and Optical Properties of Si1–xGex Alloy Nanowires

Solid-State Synthesis of Si1-xGex Nanoalloys with Composition-Tunable Energy Gaps and Visible to Near Infrared Optical Properties

Spatial bandgap engineering along single alloy nanowires.

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Tunable Thermal Conductivity of Si1−xGex Nanowires

Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires

Phonon Mean Free Path Spectrum and Thermal Conductivity for Si1−xGex Nanowires

Electronic states and phonon properties of Ge x Si 1−x nanostructures

A Self-Consistent Numerical Approach for Characterizing the Band Structures and Gain Spectrum of Tensile-Strained and N(+)-Doped Ge/GeSi Quantum Wells

Metastable Ge1-xCx alloy nanowires

First-principles Study on Ge1−xSnx-Si Core-Shell Nanowire Transistors

Structural, Electronic, and Optical Properties of Ordered Si1−Ge C Alloys: A First Principles Study

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Silver Catalyzed Gallium Phosphide Nanowires Integrated on Silicon Andin Situag-Alloying Induced Bandgap Transition

Nonlinear Optical Properties of Silicon Nanocrystals Grown by a SiOx/SiO2 Superlattice Approach

Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires

Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs1−xSbx nanowires

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals

Large Thermoelectric Figure of Merit in Si1−xGex Nanowires

Electrical Properties and Magnetic Response of Cobalt Germanosilicide Nanowires.

Alloy Engineering of a Polar (Si,Ge) 2 N 2 O System for Controllable Second Harmonic Performance