Abstract:Graphitic carbon nitride (g-C3N4) has been the focus of enormous attention in recent years for its fantastic in-plane and surface properties. Several periodic and cluster models of g-C3N4 including a quantum dot have been investigated using density functional theory (DFT) at the HSE06/Def2-TZVP level. The quantum dot with side triazine rings in nearly perpendicular alignment to the central ring was (by 98.40 kcal/mol) more stable than any other cluster, including its planar analogue—a metastable phase of carbon nitride. The g-C3N4 quantum dot showed the largest deviation (3.27 eV, 7.9%) from the bandgap of the polymeric material. On the other hand, the unrelaxed symmetrical cluster had the smallest deviation (+ 0.03 eV, 1.0%) from the reference bandgap (and also in terms of global hardness), indicating that it could be taken as a replacement cluster for modeling of a polymeric surface in such explorations. The plots of the density of states (DOS) revealed the inherent instabilities of the planar models compared to the quantum dot. Furthermore, the g-C3N4 quantum dot showed the highest chemical hardness among the models investigated. The electronic band structures of the g-C3N4 quantum dot implied its relatively better photoabsorption ability referenced to the polymeric surface. However, the structural changes had significant effects on the orbital and charge distributions in the C3N4 models.

Band gap of C3N4 in the GW approximation

Structural band-gap tuning in g-C$_3$N$_4$

Lattice Vibrations and Thermal Properties of Carbon Nitride with Defect ZnS Structure from First-Principles Calculations

A Cubic Phase Of C3n4 Synthesized In The Diamond-Anvil Cell

Band structures for Ge3N4 polymorphs studied by DFT-LDA and GWA

Quasiparticle Electronic Structure of Honeycomb C3N: from Monolayer to Bulk

A Many-Body GW+BSE Investigation of Electronic and Optical Properties of C2N

C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties

Amorphous carbon nitride (C3N4)

2D Materials: C<sub>3</sub> N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties (Adv. Mater. 16/2017)

Synthesis of C3N4+ by the Combination of Laser Ablation of Graphite and N2 Molecular Beam

Bandgap modulations and promoted carrier separation in crystalline g-C3N4 thin films via chemical vapor deposition

Quantum-chemical calculations on graphitic carbon nitride (g-C3N4) single-layer nanostructures: polymeric slab vs. quantum dot

Nitrogen-rich GaN5 and GaN6 As High Energy Density Materials with Modest Synthesis Condition

Construction of g-C3N4 with three coordinated nitrogen (N3C) vacancies for excellent photocatalytic activities of N2 fixation and H2O2 production

Cubic, wurtzite, and 4H-BN band structures calculated using GW methods and maximally localized Wannier functions interpolation

Functional Group Effects on the HOMO–LUMO Gap of g-C3N4

Band Gap Opening of Graphene by Forming Heterojunctions with the 2d Carbonitrides Nitrogenated Holey Graphene, G-C3n4, and G-Cn: Electric Field Effect

Structural, Electronic and Photocatalytic Properties of G-C3n4 with Intrinsic Defects: A First-Principles Hybrid Functional Investigation

Structural and electronic properties of double-walled G-C3N4 nanotubes: a density functional theory study

First-principles Study of Two Dimensional C3N and Its Derivatives.