Inside-and-out modification of graphitic carbon nitride (g-C 3 N 4 ) photocatalysts via defect engineering for energy and environmental science
Yuhan Li,Zhengjiang He,Li Liu,Yan Jiang,Wee-Jun Ong,Youyu Duan,Wingkei Ho,Fan Dong
DOI: https://doi.org/10.1016/j.nanoen.2022.108032
IF: 17.6
2022-11-22
Nano Energy
Abstract:g-C 3 N 4 is an attractive photocatalysts due to its visible-light response, earth abundance, chemical-thermal stability and high yield. However, the major limitation stems from the C-N forming π-conjugated planes along with relatively small electron mean free path (~10 nm) and high symmetry, which impedes the separation and transfer of photogenerated carriers. Fortunately, defect design on g-C 3 N 4 can effectively enhance the migration of photogenerated electrons by three aspects: 1) tuning charge redistribution within g-C 3 N 4 ; 2) changing surface microstructures; 3) creating new and same electron excitation orbital direction. In this review, the different strategies and mechanisms of defect engineering are classified and summarized from the perspective of breaking the structural symmetry with increasing or decreasing the atoms in a g-C 3 N 4 system. Defect modification methods with an increased atomic number include element doping (C/N self-doping and external element doping) and functionalization (functional group modification), and with a decreased number of atoms mainly referring to C or N or dual vacancies are well outlined. Accordingly, the application and mechanism of defect-modified g-C 3 N 4 in multiple fields (e.g., volatile organic compounds (VOCs) oxidation, NO x oxidation, H 2 O 2 evolution, sterilization, pesticide oxidation, hydrogen evolution, N 2 fixation and CO 2 reduction) are highlighted. This review is performed to draw a comprehensive conclusion on the defect modification strategy and photocatalytic mechanism of g-C 3 N 4 and prospect a development trend in the future.
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology