Tuning the Band Gap and the Nitrogen Content in Carbon Nitride Materials by High Temperature Treatment at High Pressure

Zhenxing Yang,Kuo Hu,Xianwei Meng,Qiang Tao,Jiajun Dong,Bo Liu,Qian Lu,Hua Zhang,Bertil Sundqvist,Pinwen Zhu,Mingguang Yao,Bing

DOI: https://doi.org/10.1016/j.carbon.2017.12.115

IF: 10.9

2017-01-01

Carbon

Abstract:Carbon nitride (C-N) materials have been attracting great interest because of their extraordinary performance in photocatalysis and energy conversion. However, developing an effective strategy for achieving band-gap engineering of C-N materials to satisfy practical applications remains highly desired. Here we report an efficient way to tune the band gap and control the nitrogen stoichiometry in carbon nitride compounds by using high pressure and high temperature (HPHT) treatment. It is found that treating a g-C3N4 precursor at relatively low temperature (630 degrees C and below) under pressure can efficiently narrow the band gap even down to the red light region (similar to 600 nm), increase the crystallinity, and significantly improve the charge carrier separation efficiency (by two orders of magnitude), almost without changing their stoichiometry. When increasing the treatment temperature under pressure, nitrogen-doped graphene/graphite materials with weak ferromagnetism were obtained. We thus obtained C-N materials with tunable band gaps, ranging from semiconducting to metallic states. XPS measurements show that pyridinic nitrogen is preferentially eliminated under such HPHT conditions while graphitic nitrogen is preserved in the C-N network. Our results thus provide an efficient strategy for tuning the structure and physical properties of C-N materials for applications. (C) 2017 Elsevier Ltd. All rights reserved.