The organic functional group effect on the electronic structure of graphene nano-ribbon: A first-principles study

Nuo Liu,Zheqi Zheng,Yongxin Yao,Guiping Zhang,Ning Lu,Pingjian Li,Caizhuang Wang,Kaiming Ho
DOI: https://doi.org/10.1088/0022-3727/46/23/235101
2013-05-23
Abstract:We report a first-principles study of the electronic structure of functionalized graphene nano-ribbon (aGNRs-f) by organic functional group (CH2C6H5) and find that CH2C6H5 functionalized group does not produce any electronic states in the gap and the band gap is direct. By changing both the density of the organic functional group and the width of the aGNRs-f, a band gap tuning exhibits a fine three family behavior through the side effect. Meanwhile, the carriers at conduction band minimum and valence band maximum are located in both CH2C6H5 and aGNR regions when the density of the CH2C6H5 is big; while they distribute dominantly in aGNR conversely. The band gap modulation effects make the aGNRs-f good candidates with high quantum efficiency and much more wavelength choices range from 750 to 93924 nm both for lasers, light emitting diodes and photo detectors due to the direct band gap and small carrier effective masses.
Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to finely regulate the band gap of armchair - type graphene nanoribbons (aGNRs) through organic functional groups (CH₂C₆H₅). Specifically, the research aims to explore the following points: 1. **Band - gap modulation effect**: By changing the density of organic functional groups and the width of aGNRs, study their influence on the band gap. In particular, it is found that the CH₂C₆H₅ functional group does not introduce any electronic states in the band gap, and the band gap is a direct band gap. 2. **Carrier distribution**: When the density of the functional group is large, the carriers at the conduction band minimum (CBM) and the valence band maximum (VBM) are simultaneously located in the CH₂C₆H₅ and aGNR regions; when the density is small, the carriers are mainly distributed in the aGNR region. 3. **Application potential**: The research results show that due to the direct band gap and small effective mass, the functionalized aGNRs have broad application prospects in optoelectronic devices such as lasers, light - emitting diodes (LEDs) and photodetectors, and can cover the wavelength range from 750 to 93,924 nm. ### Key problem summary - **Band - gap modulation**: Through first - principles calculations, the research explores the influence of the CH₂C₆H₅ functional group on the band structure of aGNRs, especially how to achieve fine regulation of the band gap by adjusting the density of the functional group and the width of aGNRs. - **Carrier behavior**: Analyze the distribution of carriers under different conditions (such as the density of the functional group and the width of aGNRs), and reveal the behavioral characteristics of carriers at CBM and VBM. - **Application prospects**: Based on the above research, the paper discusses the potential applications of functionalized aGNRs in optoelectronic devices, especially the possibility of achieving high - efficiency quantum efficiency in a wide wavelength range. Through these studies, the author hopes to provide theoretical support and technical guidance for the future design of graphene - based optoelectronic and electronic devices.