Abstract:Due to the large thermal and lattice mismatch between gallium oxide (Ga2O3) and diamond, the resulting residual stress brings high defect densities and susceptibility to cracking on the Ga2O3 epilayer. To balance the stress-strain behavior and eliminate the dislocation defects, this study employed diamond composite substrates which consist of a pre-grown AlN strain interlayer on the surface of the bulk diamond to heteroepitaxy Ga2O3 nanomembranes via pulsed laser deposition (PLD). To achieve an optimal solution of high-quality Ga2O3 thin films, several comparative investigations were proposed and gave a preliminary exploration. Subsequently, spectroscopic ellipsometry (SE), high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS), were performed to characterize the physical, chemical, and optical properties. A comprehensive analysis was conducted on the quality of Ga2O3 thin films dependent on the growth processes including oxygen pressure, in-situ annealing treatment, and the “two-step” growth. It demonstrated that high oxygen pressure significantly increased the growth rate of Ga2O3 (∼ 2 times), slightly improved crystallinity and surface morphology (RMS decreased ∼ 2.2 nm), and reduced oxygen vacancy defects (∼ 3%). The additional in-situ annealing process and the “two-step” growth method also brought a bit of thickness increase (∼ 28 nm and ∼ 14 nm, respectively). By in-situ annealing in various stages, 2D and 3D growth modes competition caused Ga2O3 thin films' continuous grain growth and fewer oxygen vacancy defects but presented different variations of surface morphology. On the whole, the “two-step” growth enhancement scheme proves the largest effect on Ga2O3's quality among the designed sets of experiments. Exploring various optimization schemes and proposing a highly reliable growth technology route is of great significance to give impetus to Ga2O3 application in the electric power field. Consequently, for further insight, continuous work will be propelled in the future.

Deposition and properties of highly C-oriented GaN films on diamond substrates

The enhanced GaN deposition on highly N-incorporated diamond substrate

Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance

High quality GaN films on miscut (1 1 1) diamond substrates through non-c orientation suppression

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Chemical Vapor Deposition of Ge on GaN/Al2O3(0001) Substrates

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD

Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Optimization of Heteroepitaxial Gallium Oxide Thin Films on Diamond Composite Substrates using Pulsed Laser Deposition Method

Morphologies and structures of chemical vapor deposited diamond films and film-substrate interfaces

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure

Characterizations of GaN Films and AlGaN/GaN Heterostructures on Vicinal Sapphire (0001) Substrates Grown by MOCVD

Formation of GaN film by ammoniating Ga2O3/Al2O3 deposited on Si(lll) substrate

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Direct growth of highly oriented GaN thin films on silicon by remote plasma CVD