Abstract:The cadmium sulfide (CdS) n-type semiconductor is one of the most used as a window layer in thin-film solar cells, such as CdTe, CIS, CIGS, and CZTS. Optoelectronic properties are the most important characteristics for window materials. CdS thin films obtained using the chemical bath deposition technique (CBD) have been reported; however, large amounts of precursor solutions are used, which generate considerable amounts of toxic waste. The aim of this work is to reduce the amount of precursor solutions used for CdS growth; for this, it is necessary to consider an efficient position for the substrate inside the reactor container and at the same time allow obtaining CdS thin films with adequate physical properties to be applied in the photovoltaic solar cell development. CdS thin films were deposited on soda-lime/SnO2:F substrates (FTO) using the CBD technique; the substrates were placed in three different arrangements [rack system, step system (up), and step system (down)]. CdS samples with areas of 4 cm2 and a thickness of 27-48 nm were obtained; the X-ray diffraction patterns show CdS thin films with different polycrystalline structures. The morphological measurements reveal different surface formations depending on the substrate position, and resistivity values of around 105 Ω*cm were measured. UV-vis spectra show transmittance values of around 45-94% in the visible region with band gap energy values of around 2.1-2.36 eV. The best physical properties of CdS thin films and an efficient CBD process were obtained when the FTO substrates were located near the bottom of the reactor container with the FTO side down, leading to an optimal configuration that allows reducing the amount of precursor solutions and in this way reduces the toxic waste generated. These results are important in the photovoltaic technology process and environmental impact.

In-situ Growth of a CdS Window Layer by Vacuum Thermal Evaporation for CIGS Thin Film Solar Cell Applications

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications

High-efficiency CdTe-based Thin-Film Solar Cells with Unltrathin CdS:O Window Layer and Processes with Post Annealing

Comprehensive Analysis of CdS Ultrathin Films Modified by the Substrate Position inside the Reactor Container Using the CBD Technique

The Effect of Substrate Temperatures on CdS Film Prepared by Thermal Evaporation

Mechanism‐Based Approach of CdS/Cu(In,Ga)Se2 (CIGS) Interfaces for CIGS Solar Cells Through Deposition in Different Stages of Continuous Chemical Bath Deposition Reaction: Key to Achieving High Photovoltaic Performance

Research progress on synthesis of CuIn1-x Gax Se2 nanoparticles

Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

Electron Beam Evaporated Cadmium Sulphide Thin Films for Solar Cell Applications

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

Rapid thermal evaporation for cadmium selenide thin-film solar cells

Optoelectronic Effects of Copper–Indium–Gallium–Sulfur (CIGS2)-Solar Cells Prepared by Three-Stage Co-Evaporation Process Technology

Electronic and Optical Properties of CdS Films Deposited by Evaporation

Chemical Bath Deposition and Optical Properties of CdS Nanocrystalline Films with Tunable Electronic Band Gap

An Optimized Multilayer Structure of CdS Layer for CdTe Solar Cells Application

Growth and Characterization of Copper Indium Gallium Diselenide Films for Solar Cells Fabrication

Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films: Solar cell applications

Growth of Cubic CdS Films on TiO2-terminated (100) SrTiO3 Substrate

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells