Single-Crystalline Thin-Film Memory Arrays of Molecular Ferroelectrics with Ultralow Operation Voltages
Mingsheng Xu,Jiajun Chen,Xiaojie Zhou,Yongfa Xie,Luqiu Chen,Jiao Wang,Chenxu Sheng,Bobo Tian,Hong Wang,Wenchong Wang,Chunxiao Cong,Zhi-Jun Qiu,Ran Liu,Laigui Hu
DOI: https://doi.org/10.1021/acsmaterialslett.2c00070
IF: 11.4
2022-03-23
ACS Materials Letters
Abstract:Though most of the recently developed molecular ferroelectrics (MFs) exhibit excellent ferroelectric properties, the practical applications are still impeded by the limited polarization axes, poor processing capability for a high-quality thin film, and the incompatibility with matured lithography techniques for microelectronics. Here, we successfully demonstrated MF-based single-crystalline microdevice arrays using a lithography-compatible, solution-processed strategy that can avoid the above-mentioned obstacles at one time, i.e., dewetting-assisted patterning crystallization strategy. As a protype, uniform and well-aligned single-crystalline thin-film arrays of multiaxial MF [3-oxoquinuclidinium]ClO4 ([3-O-Q]ClO4) are prepared. Owing to the well-aligned crystallographic orientation and polarization direction, the obtained single-crystalline nonvolatile memory (NVM) arrays can exhibit an ultralow operating voltage of ∼1.6 V and long endurance cycles of 106, which are superior to other organic NVM devices. This work implies a promising route to high-density single-crystalline memory arrays for data storage, especially for low-cost flexible electronics.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsmaterialslett.2c00070.Details of materials and methods, preparation and characterization of prepatterned substrate, [3-O-Q]ClO4 arrays and devices (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary