A Fully Integrated Dual‐band Low‐noise Amplifier for Bluetooth and Wireless LAN Applications

M Shouxian,JG Ma,KS Yeo,DM Anh
DOI: https://doi.org/10.1002/mop.20121
IF: 1.311
2004-01-01
Microwave and Optical Technology Letters
Abstract:A fully integrated dual-band low-noise amplifier (LNA) implemenled in a standard 0.18-mum 1P6M CMOS process is presented in this paper. The LNA draws 12-mA current from a 1.5-V voltage supply and achieves power gains of 25 and 10 dB, and noise figures of 3.6 and 4 dB at 2.4 and 5.6 GHz respeciively. (C) 2004 Wiley Periodicals, Inc.
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