Abstract:Organic–silicon hybrid solar cells have attracted much attention because of the combination of high stability of inorganic materials and adjustable photoelectric characteristics of organic materials. However, because of the large Schottky barrier height caused by Fermi level pinning, most common metals (such as Al and Ag) cannot form Ohmic contacts on n-Si. In this work, we propose a TiN carrier selective contact electrode. The efficiency of organic–Si solar cells with TiN contact is 12.1% because of the significant improvement in the fill factor and open-circuit voltage. In order to reduce the parasitic optical absorption of the TiN film, an ultrathin TiN and 500 nm Al complex film is used, and the corresponding cell efficiency reaches as high as 13.30% with a Voc of 593 mV, an FF of 75.41%, and a Jsc of 29.73 mA/cm2. This work not only provides a novel path for designing electrodes but also demonstrates huge potential to achieve low-cost and high-performance photovoltaic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c01517?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c01517</a>.XPS spectra, UPS spectrum, plot of (αhv)2 against photon energy, J–V characteristics, UV absorption spectrum, Jsc calculated by integrating the EQE and the air mass (AM) 1.5 G product, refractive index (n), and absorption coefficient (k) curves (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c01517/suppl_file/ae0c01517_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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