Abstract:Energy consumption has become the major concern of the IC industry. As a result, near-threshold-voltage (NTV) design has attracted a lot of attention for its superiority in energy efficiency. However, NTV design is faced with the key challenge variability, especially for FinFET technology where device electrical FoMs are found to be strongly correlated. In this paper, new methodology of NTV design optimization for FinFET is proposed for the first time, and demonstrated based on silicon data. Significant improvements are achieved in the following three aspects: (1) Our newly proposed predictive compact variability models in all-region are accurately calibrated with experimental data, using a simple characterization method; (2) A new efficient approach for logic design space optimization is proposed based on a set of elaborately selected subthreshold FoMs, and the impacts of variation on energy efficiency, delay variation and failure probability are thoroughly investigated; (3) The conventional gate sizing method is also ameliorated specifically for FinFET NTV design. Based on silicon data, the proposed methodology is then demonstrated under V-dd=199mV and V-dd=145mV, targeting energy-efficiency priority and V-dd priority scenarios, respectively. This work provides helpful guidelines for FinFET variation-aware near-threshold design.

A Dynamic-Adjusting Threshold-Voltage Scheme for FinFETs Low Power Designs.

Evaluation of Dynamic-Adjusting Threshold-Voltage Scheme for Low-Power FinFET Circuits.

Low Power Adiabatic Logic Based on FinFETs

New Dynamic Threshold MOS Structures for Low-Energy True-Single-Phase-Clocking Circuits

Compact Modeling of Dynamic Threshold Voltage of Nanoscale FinFET High K Gate Stack and Application in Circuit Simulation

A Transistor-Level DFF Based on FinFET Technology for Low Power Integrated Circuits

The Application of Gate-Drain Underlap Architecture in TFET-based Inverters

Leakage Power Reduction Of Adiabatic Circuits Based On Finfet Devices

Design Optimization of High Performance Strained SOI Dynamic Threshold MOSFET's

An Algorithm for Reducing Leakage Power Based on Dual-Threshold Voltage Technique

Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology.

Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process

Modeling of dynamic threshold voltage in high K gate stack and the application in FinFET reliability

Design of D flip-flops with low power-delay product based on FinFET

Design of Low-Power High-Performance FinFET Standard Cells

New Insights Into The Near-Threshold Design In Nanoscale Finfet Technology For Sub-0.2v Applications

Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors

New Noise-Tolerant Dynamic Circuit Design

Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability Simulation

Junctionless nanowire MOSFET with dynamic threshold voltage operation methodology

A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology