Highly (100)-oriented Pb(Zr0.20Ti0.80)O3/(Pb1−xLax)Ti1−x/4O3 multilayered thin films prepared by RF magnetron sputtering
Jiagang Wu,Dingquan Xiao,Jiliang Zhu,Jianguo Zhu,Junzhe Tan,Qinglei Zhang
DOI: https://doi.org/10.1016/j.mee.2007.06.019
IF: 2.3
2008-01-01
Microelectronic Engineering
Abstract:The Pb(Zr 0.20 Ti 0.80 )O 3 /(Pb 1− x La x )Ti 1− x /4 O 3 ( x = 0, 0.10, 0.15, 0.20) (PZT/PLT x ) multilayered thin films were in situ deposited on the Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates by RF magnetron sputtering technique with a PbO x buffer layer. With this method, all PZT/PLT x multilayered thin films possess highly (1 0 0) orientation. The PbO x buffer layer leads to the (1 0 0) orientation of the multilayered thin films. The effect of the La content in PLT x layers on the dielectric and ferroelectric properties of the PZT multilayered thin films was systematically investigated. The enhanced dielectric and ferroelectric properties are observed in the PZT/PLT x ( x = 0.15) multilayered thin films. The dielectric constant reaches maximum value of 365 at 1 KHz for x = 0.15 with a low loss tangent of 0.0301. Along with enhanced dielectric properties, the multilayered thin films also exhibit large remnant polarization value of 2 P r = 76.5 μC/cm 2 , and low coercive field of 2 E c = 238 KV/cm. Keywords PZT multilayered ferroelectric thin films RF magnetron sputtering Orientation Dielectric property Ferroelectric property 1 Introduction Ferroelectric thin films have attracted much attention in recent years, because of their practical or potential applications in various fields, such as ferroelectric nonvolatile random access memories, modulators and so on [1,2] . Among the researches lead zirconate titanate [Pb(Zr 1 − x Ti x )O 3 , (PZT)] thin films have been one of the most extensively studied materials for nonvolatile random access memory application due to large remnant polarization and low coercive field [3] . Recently, the multilayered films have been one of the most extensively studied materials [4–10] . The coupling and interactions among the layers in the multilayered structures can strongly affect the films’ growth, crystallization orientation, and electrical properties. An appropriate combination of the layers with different compositions can produce either much improved functional properties or create one or more novel ones [4–10] . It was reported that the bottom (Pb 0.72 La 0.28 )Ti 0.93 O 3 layer enhances electrical properties, and compensates for space charges encountered at interfaces or in assisting the crystallization process of the PZT multilayered thin films [11] . Moreover, the orientation control of the multilayered thin films is also very important for obtaining good properties [7] . But there are few systematical reports about the preparation of highly (1 0 0)-oriented multilayered thin films with Pb(Zr 0.20 Ti 0.80 )O 3 /(Pb 1− x La x )Ti 1− x /4 O 3 ( x = 0, 0.10, 0.15, 0.20) (PZT/PLT x ) structures. As a result, in this work, highly (1 0 0)-oriented multilayered thin films with Pb(Zr 0.20 Ti 0.80 )O 3 /(Pb 1− x La x )Ti 1− x /4 O 3 ( x = 0, 0.10, 0.15, 0.20) (PZT/PLT x ) structures were prepared by RF magnetron sputtering method with a PbO x buffer layer, the effect of La content in PLT x layer on the dielectric and ferroelectric properties of the PZT multilayered thin films was mainly investigated. 2 Experiment procedure In this work, the PbO x buffer layer was deposited on the Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates at the substrate temperature of 650 °C, and then PLT x and Pb 1.10 (Zr 0.20 Ti 0.80 )O 3 ceramics targets were used to prepare the PZT/PLT x multilayered thin films on the PbO x /Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates by RF magnetron sputtering technique at the substrate temperature of 600 °C, using the targets of PbO, PLT x ( x = 0, 0.10, 0.15, 0.20) and PZT. The thickness of the PbO x , PLT x , and PZT is estimated by deposition rate, the thicknesses of the PbO x , PLT x and PZT are about 25 nm, 80 nm and 800 nm, respectively. The schematic diagram of the PZT/PLT x multilayered thin films is shown in Fig. 1 . The targets of PLT x and PZT ceramics were added to 10% excess PbO for compensating for the loss of Pb element during process. The sputtering power was fixed at 50 W for PbO, and at 80 W for PLT x , PZT; and the distance between the target and the substrate was set at 5 cm. All films were deposited with the ratio of oxygen (O) and argon (Ar) of 10 sccm: 40 sccm under a working pressure of 2.0 Pa. The detailed preparation parameters of the multilayered films are listed in Table 1 . X-ray diffraction (XRD) characterization of the films was performed by using Cu Kα radiation [(λ = 1.54178 Å)] in the mode of θ– 2 θ scan (DX-1000, Dandong, China). In order to measure the electrical properties of the films, dot-type gold electrodes with an area of 20 × 10 −4 cm 2 were deposited by direct current (dc) sputtering, which forms Au/PZT/PLT x /PbO x /Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) stacked capacitors. The dielectric properties of the films were measured by a LCR (TH2816) analyzer. The hysteresis loops of polarization ( P ) as a function of applied electric field ( E ) ( P – E curve) were evaluated by using Radiant Precision Ferroelectric Measurement System (Precision Workstation. USA). 3 Results and discussion Fig. 2(b)–(e) show the XRD patterns of the PZT/PLT x ( x = 0, 0.10, 0.15, 0.20) multilayered thin films with a PbO x buffer layer. It is found from Fig. 2 . that the PZT monolayered thin films without a PbO x buffer layer possess the polycrystalline structure with random orientation, however, the PZT/PLT x multilayered thin films with a PbO x buffer layers possess highly (1 0 0) preferred orientation. These results show significant improvement in the quality of PZT/PLT x multilayered thin films as compared with the reported results where most of the multilayered films have a polycrystalline structure on platinized silicon substrate [4–6] . It is also found that the PZT/PLT x ( x = 0.15) multilayered thin films possess stronger (1 0 0) orientation, as indicated by the unusually high intensity of the (1 0 0) and (2 0 0) peaks, the significant improvement in the quality of the PZT/PLT x multilayered thin films may also affect the dielectric and ferroelectric properties, which will be discussed later. The inserted illustration in Fig. 2 . shows the expanded XRD patterns of the (2 0 0) plane of the multilayered thin films in the 2 θ range of 44–48°. It is found from the inserted illustration that the positions of (2 0 0) diffraction peaks of XRD patterns of the multilayered thin films with different PLT x layers are different. So it is thought that the lattice distortion happens in the PZT/PLT x multilayered thin films. In order to further study the effect of the PbO x buffer layer on the orientation of the PZT/PLT x multilayered thin films, the crystal structure of the PbO x buffer layer sputtered at the substrate temperature of 650 °C was analyzed. The PbO x buffer layer was deposited onto the Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrate by using the target of PbO, the XRD pattern of the PbO x buffer layer is shown in Fig. 3 . The XRD pattern for the PbO x buffer layer shows that the buffer layer is PbO 1.55 , and possesses (1 0 0) preferred orientation. So the (1 0 0)-oriented PbO x buffer layer leads to the (1 0 0) orientation of the PZT/PLT x multilayered thin films. The PZT films usually need high processing temperature, the processing temperature of the PZT/PLT x multilayered films in present work was 600 °C, which is lower compared with the literature temperature of 700–800 °C for the PZT films [12,13] . Because the PLT x layers have crystal structure similar to that of the PZT thin films offer nucleation sites, and reduce the activation energy for the crystallization of PZT thin films, i.e. the PLT x layers promote the formation of perovskite phase at lower processing temperature due to the presence of ample nucleation sites. As a result, the PLT x layer decreases the processing temperature of the PZT films. The dielectric properties of the capacitors were measured by a LCR analyzer. Fig. 4 . shows the relative dielectric constant ( ε r ) and dielectric loss (tan δ ) measured at 1 kHz as a function of La content in PLT x layer. The relative dielectric constant of the PZT/PLT x multilayered thin films increases with the increase of La content, reaches maximum (365) at 1 kHz at x = 0.15, and drops with further increase of La content in PLT x layers. It is reported that the multilayered films possess dielectric enhancement, but dielectric losses are unusually high [7,8] . Significantly, in this work, along with the dielectric enhancement, there was a low dielectric loss in the PZT/PLT x multilayered thin films, the loss is 0.0301. As a result, the dielectric properties of the PZT/PLT x multilayered thin films can be modulated by the La content in the PLT x layer. The measurement of the ferroelectric hysteresis loops of the PZT/PLT x thin films was performed at room temperature. The remnant polarization values vs coercive field ( P – E ) curves of the PZT/PLT x multilayered thin films are shown in Fig. 5 . The PZT/PLT x multilayered thin films possess good ferroelectric properties. Fig. 6 . shows the remnant polarization (2 P r ) and coercive field (2 E c ) as a function of La content in PLT x layers. The films with PZT/PLT 0.15 structure exhibit higher remnant polarization (2 P r ) of 76.5 μC/cm 2 and a lower coercive field of 2 E c = 238 kV/cm as compared to the films with PZT/PLT x ( x = 0, 0.10, 0.20) structure at an applied electric field of 600 kV/cm, which is also larger compared with the literature values of 2 P r = 40–67 μC/cm 2 for polycrystalline PZT multilayered thin films [10,11,14] . Enhanced electrical properties of the PZT/PLT x multilayered thin films are attributed to the interlayer coupling and electrostatic interactions between the PZT and PLT x layers in the multilayered structures [4,15] . In this work, it is found that the strain is also an important factor to affect dielectric and ferroelectric properties of the multilayered films. From the inserted illustration in Fig. 2 . a small change in lattice parameters was found, i.e. the lattice distortion (or strain) exists in the PZT/PLT x multilayered thin films. As a result, the strain of the films also plays an important role on the enhanced dielectric and ferroelectric properties of the PZT/PLT x multilayered thin films. Present results are quite like those reported previously [16,17] . Previous results have also shown that an appropriate strain of the consisting layers or appropriate stresses existing in the film can improve the electrical properties [16–18] . In this work, enhanced dielectric and ferroelectric properties of the PZT/PLT 0.15 multilayered thin films are obtained. Therefore, it is reasonable to speculate on that the appropriate strain may introduce in the PZT/PLT x multilayered thin films with x = 0.15, which results in the enhancement of the dielectric and ferroelectric properties. The other possible reason could be the (1 0 0)-oriented PbO x buffer layer, which results in the (1 0 0)-oriented PZT/PLT x multilayered thin films, just as that the orientation of the multilayered films resulted in an increase in remnant polarization [7] . The PZT/PLT x ( x = 0.15) multilayered thin films possess better dielectric and ferroelectric properties than the other multilayered films, which may be partly due to the improved crystallinity of the PZT/PLT x ( x = 0.15) multilayered films according to the XRD results shown in Fig. 2 . which is similar to the phenomenon in Pb(Zr 0.8 Ti 0.2 )O 3 /Pb(Zr 0.2 Ti 0.8 )O 3 multilayered thin films by other authors et al. [4] . 4 Conclusion Highly (1 0 0)-oriented PZT/PLT x ( x = 0, 0.10, 0.15, 0.20) multilayered thin films were in situ prepared on the PbO x /Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates by RF magnetron sputtering method. The effect of the La content in PLT x layers on the dielectric and ferroelectric properties of PZT multilayered thin films was studied. The experimental results show that the PbO x buffer layer leads to the (1 0 0) orientation of PZT/PLT x multilayered thin films. The PLT x layers enhance the dielectric and ferroelectric properties, and decrease the crystal temperature of the films. The (1 0 0)-oriented PZT/PLT x multilayered thin films at x = 0.15 possess the enhancement of the dielectric and ferroelectric properties. This result demonstrates that the PZT/PLT x multilayered ferroelectric structures are a potential candidate for micro electro mechanical systems devices. Acknowledgements The authors gratefully acknowledge the support of the National Science Foundation of China (Grant No. 50132020) and the National Key Fundamental Research Program (Grant No. Z0601). References [1] J.F. Scott C.A.P. de Araujo Science 246 1989 1400 [2] O. Auciello J.F. Scott R. Ramesh Phys. 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