Abstract:(Pb1-xLax)Ti1-x/4O3/Pb(Zr0.20Ti0.80)O-3/(Pb1-xLax)Ti1-x/4O3 (x = 0, 0.10, 0.15, 0.20) [PLTx/PZT/PLTx] multilayered thin films were in situ deposited on Pt(111)/Ti/SiO2/Si(100) substrates by a RF magnetron sputtering technique with a PbOx buffer layer. With this method, all the multilayered films possess highly (100) orientation. The PbOx buffer layer leads to the (100) orientation of the multilayered films; the double-sided PLTx layers improve the electrical properties of the films. The effect of the La content in the PLTx layers on the dielectric and ferroelectric properties of the PZT thin films was investigated. The enhanced dielectric and ferroelectric properties are observed in the PLTx/PZT/PLTx (x = 0.10) multilayered films. The dielectric constant reaches a maximum value of 298 at 1 kHz for x = 0.10 with a low loss tangent of 0.0261; along with enhanced dielectric properties, the multilayered films also exhibit a large remanent polarization value of 2P(r) = 58.6 mu C/cm(2). (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly (100)-Oriented (Pb1-Xlax)ti1-x/4o3/pb(zr0.20ti0.80)o-3/(pb1-xlax)ti1-x/4o3 Multilayered Thin Films by Re Magnetron Sputtering