Abstract:Silicon-based semiconductor transistors are approaching their physical limits due to shrinking feature sizes. Simultaneously, traditional silicon-based von Neumann architectures exhibit significant latency and power consumption issues in data-centric applications, such as the Internet of Things and artificial intelligence. To tackle these challenges, this study introduces a novel approach: Magnetoresistance Random Access Memory (MRAM) computing in-memory (CIM) using gate-all-around carbon nanotube field-effect transistors (GAA-CNTFET). The proposed MRAM array comprised three transistors and one perpendicular magnetic anisotropy spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) (3T1M) cell and achieves full-array Boolean logic operations and half/full-adder operations. The calculated results can be stored in-situ during the computing phase without requiring additional peripheral circuits. A 16 Kb MRAM was simulated in both GAA-CNTFET/p-SOT-MTJ and 14-nm FinFET/p-SOT-MTJ technologies to examine the effectiveness of the proposed design. Compared to its 14-nm FinFET/p-SOT-MTJ counterparts, the write and computing latencies of the GAA-CNTFET/p-SOT-MTJ CIM macro were reduced by approximately 21% and 20.6%, respectively, while the read and computing energy consumption by approximately 45.3% and 24.7%, respectively. Moreover, the proposed in-memory Boolean logic throughput was 8192 GOPS, which was approximately 160–250 times higher than that of existing CIM solutions, in which only two rows of word lines can be activated.

Tas-Mram-Based Low-Power High-Speed Runtime Reconfiguration (rtr) Fpga

TAS-MRAM Based Non-volatile FPGA Logic Circuit.

Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit

Power and Area Optimization for Run-Time Reconfiguration System on Programmable Chip Based on Magnetic Random Access Memory

Design of TAS-MRAM Prototype for NV Embedded Memory Applications

Design of MRAM Based Logic Circuits and Its Applications

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

Spintronic Memory-Based Reconfigurable Computing

High-Density and High-Reliability Nonvolatile Field-Programmable Gate Array with Stacked 1D2R RRAM Array

Design and Hardware Implementation of a STT-MRAM Based SoC Architecture for Smart Card Chip

A High Throughput In-MRAM-Computing Scheme Using Hybrid P-Sot-mtj/gaa-cntfet

FPGA Based on Integration of CMOS and RRAM

Racetrack Memory-Based Nonvolatile Storage Elements for Multicontext Fpgas

MRAM Crossbar Based Configurable Logic Block.

Low Power Magnetic Full-Adder Based on Spin Transfer Torque MRAM

High Density Asynchronous LUT Based on Non-volatile MRAM Technology

A FinFET Integrated STT-MRAM with Triple Balanced Access Strategy.

High performance and energy-efficient in-memory computing architecture based on SOT-MRAM

DDR-MRAM: Double Data Rate Magnetic RAM for Efficient Artificial Intelligence and Cache Applications

Non-volatile Register Based on Hybrid Spintronics/cmos Technology

Rfga: CMOS-nano Hybrid FPGA Using RRAM Components