The Energy Gap of Rf-Sputtered Batio3 Thin Films with Different Grain Size and Thickness

JS Zhu,XM Lu,X Liu,Z Yang,YN Wang

DOI: https://doi.org/10.1080/00150199708008381

1997-01-01

Ferroelectrics

Abstract:The optical transmittance of the rf-magnetron sputtered BaTiO3 thin films with different grain size and thickness on fused quartz was measured. The observed size effect on the energy gap was discussed.

What problem does this paper attempt to address?

The energy gap of r.f.-sputtered BaTiO3 thin films with different grain size

X.M. Lu,J.S. Zhu,W.Y. Zhang,G.Q. Ma,Y.N. Wang

DOI: https://doi.org/10.1016/0040-6090(95)08000-7

IF: 2.1

1996-01-01

Thin Solid Films

Abstract:BaTiO3 thin films were deposited using the r.f. magnetron sputtering technique on unheated fused quartz, poly-crystalline Pt and (111)Si substrates. The films with different grain sizes were obtained through post-deposition heat treatment. The optical transmittance of the films with different grain sizes on fused quartz substrates was measured and the observed shift of the energy gap with grain size was discussed.
Optical Study on the Size Effects in Batio3 Thin Films

JS Zhu,XM Lu,W Jiang,W Tian,M Zhu,MS Zhang,XB Chen,X Liu,YN Wang

DOI: https://doi.org/10.1063/1.363875

IF: 2.877

1997-01-01

Journal of Applied Physics

Abstract:To study the size effects in ferroelectric thin film, we measured the optical transmittance and Raman spectra in BaTiO3 thin films deposited by the rf-magnetron sputtering technique on fused quartz and (111) Si substrates. A variation in the energy gap and Raman peaks with film thickness and grain size was observed and the possible origin was analyzed.
Size Effects in BaTiO3 Thin Films

Lu X.M.,Zhu J.S.,Li P.,Jiang W.,Liu X.,Wang Y.N.

DOI: https://doi.org/10.1557/PROC-403-545

1995-01-01

Abstract:The size effects were studied by the measurement of optical transmittance, Raman spectra and mechanical dissipation in BaTiO3 films. The variation of energy gap, Raman peaks, Curie temperature with film thickness and grain size was observed and the possible origin was analyzed.
Determination Of Refractive Indices And Thicknesses Of Ba0.7sr0.3tio3 Films With And Without Mgo (001) Buffer Layer On Silicon Substrate

yuanqi yin,Hui Ye,chunxiang zhang,Weidong Shen,xingfang liu

DOI: https://doi.org/10.1063/1.3232225

IF: 2.877

2009-01-01

Journal of Applied Physics

Abstract:Ba0.7Sr0.3TiO3 (BST30) thin films, deposited on single crystal Si (100) substrates with or without a MgO(001) buffer layer by the sol-gel method, have been investigated for their optical properties with a visible reflection spectrophotometer. An improved simplex numerical optimization method based on the reflectance spectra fitting is utilized to obtain the refractive indices and thicknesses of the thin films. Two models for the refractive index variations of the films (with or without a MgO buffer layer) together with a resemble double-layer structure are used to describe the films. The crystallization and microstructure of the films are characterized by the field emission scanning electron microscopy, which indicates that the MgO(001) buffer layer can significantly hold up the interdiffusion between the BST30 layer and the Si substrate, acuminate the interfaces, and improve the crystallinity of the BST thin film deposited on it. Furthermore, due to the large difference between the refractive index of the BST30 thin film and that of the MgO(001) buffer layer, which results in a strong beam confinement, a desirable waveguide structure could be constructed. (C) 2009 American Institute of Physics. [doi:10.1063/1.3232225]
Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

XIA Qi-ping,WANG Xiao-xiao,LV Jian-guo,SONG Xue-ping,SUN Zhao-qi

DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2011.02.006

2011-01-01

Abstract:The c-axis preferred orientation ZnO films was deposited on quartz and Si substrates using RF reactive magnetron sputtering.The O2∶Ar flow ratio was 10∶40,20∶40,30∶40 and 40∶40 during the magnetron sputtering process.The microstructure and optical properties of ZnO films were investigated by X-ray diffraction,stylus profilometer,atomic force microscope and ultraviolet-visible spectrum.The results indicated that ZnO films prepared at 30∶40 had the best crystal quality.The average transmission of ZnO thin films are above 87%.As the O2∶Ar ratio increasing,the transmission of ZnO thin films change non-monotonically and reach a maximum of above 93% at 30∶40.The optical band gap of ZnO films first increases and then decreases as O2∶Ar ratio increasing.Compared with the optical band gap(3.37 eV) of buck ZnO,the band gap of all ZnO films become narrow.
Size Effects on Structure and Raman Spectra of BaTiO3 Thin Films

Bing Wang,Lide Zhang

DOI: https://doi.org/10.1002/(SICI)1521-396X(199809)169:1<57::AID-PSSA57>3.0.CO;2-J

1998-01-01

Abstract:To study the size effects in ferroelectric thin films, we investigated the crystal structure and Raman spectra of BaTiO3 thin films deposited by rf magnetron sputtering technique. The results indicated that the characteristic of tetragonal phase disappears for thin films with an average size below 55 nm. The lattice parameters and the frequencies of Raman bands strongly depend on grain sizes of the thin films and monotonously increase with decreasing grain size. The possible origin for the size effects is discussed.
Structural, electrical and optical properties of transparent conductive titanium–gallium–zinc oxide films by magnetron sputtering

Zhou Lu,H. Kang,Z. Zhong,T. Zhang

DOI: https://doi.org/10.1007/s10854-016-5475-4

2016-08-24

Abstract:The transparent semiconductors of titanium–gallium–zinc oxide (TiGa–ZnO) thin films were prepared on glass substrates by radio frequency (rf) magnetron sputtering. The dependence of the grain-growth orientation, structure, electrical and optical properties of thin films on rf power was investigated by X-ray diffractometer, UV–visible spectrophotometer and Hall effect measurement system. Experimental results show that all nanocrystalline TiGa–ZnO thin films possess preferential orientation along the (002) plane. The rf power strongly affects the crystal structure, electrical and optical properties of thin films. When the rf power is at 190 W, the thin film deposited on the glass substrates has the optimal crystal quality and optoelectronic properties, with the largest mean grain size (83.1 nm), the minimum lattice strain (6.287 × 10−4), the highest average transmittance in the visible range (84.62 %), the lowest electrical resistivity (9.68 × 10−4 Ω cm) and the maximum figure of merit (6.173 × 103 Ω−1 cm−1). The optical bandgaps of thin films were evaluated by extrapolation method and observed to increase firstly and then decrease with the increment of rf power. Furthermore, the optical parameters including refractive index, extinction coefficient, dielectric constant and dissipation factor of the thin films were determined by the pointwise unconstrained optimization method. The dispersion behaviour of refractive index was also analyzed using the Wemple–DiDomenico single-oscillator theory.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
High-Resolution Electron Energy-Loss Spectroscopy Of Batio3/Srtio3 Multilayers

Jingmin Zhang,Alina Visinoiu,Frank Heyroth,Frank Syrowatka,Marin Alexe,Dietrich Hesse,Hartmut S. Leipner

DOI: https://doi.org/10.1103/PhysRevB.71.064108

IF: 3.7

2005-01-01

Physical Review B

Abstract:The dielectric properties of BaTiO3 thin films and multilayers are different from bulk materials because of nanoscale dimensions, interfaces, and stress-strain conditions. In this study, BaTiO3/SrTiO3 multilayers deposited on SrTiO3 substrates by pulsed laser deposition have been investigated by high-energy-resolution electron energy-loss spectroscopy. The fine structures in the spectra are discussed in terms of crystal-field splitting and the internal strain. The crystal-field splitting of the BaTiO3 thin layer is found to be a little larger than that of bulk BaTiO3, which has been interpreted by the presence of the internal strain induced by the misfit at the interface. This finding is consistent with the lattice parameters of the BaTiO3 thin layer determined by the selected area diffraction pattern. The near-edge structure of the oxygen K edge in BaTiO3 thin layers and in bulk BaTiO3 are simulated by first-principle self-consistent full multiple-scattering calculations. The results of the simulations are in a good agreement with the experimental results. Moreover, the aggregation of oxygen vacancies at the rough BaTiO3/SrTiO3 interface is indicated by the increased [Ti]/[O] element ratio, which dominates the difference of dielectric properties between BaTiO3 layer and bulk materials.
Grain Size Effect on Structures and Dielectric Constants for Nanocrystalline Batio3 Ceramic

L. M. Wang,X. Y. Deng,J. B. Li,G. Q. Zhang,C. P. Wang,K. F. Su

DOI: https://doi.org/10.1179/1432891713z.000000000213

2013-01-01

Materials Research Innovations

Abstract:Size effect on the crystalline phase contents has been investigated for BaTiO3 ceramics and varied from 100 to 8 nm by means of X-ray diffraction and Raman spectroscopy techniques. Mixed phases of tetragonal and orthorhombic at room temperature were corroborated by Raman spectroscopy. Rietveld refinement for X-ray diffraction data revealed that a locally orthorhombic structure preceded the globally tetragonal form with the grain decreasing, and a modified brick wall model was used to predict the dielectric constant between 100 and 8 nm, which demonstrated that grain boundary effects, coexisted structures took the dominant role in determining the ultrafine nanocrystalline BaTiO3 ceramics dielectric constant.
The Effect of Sputtering Target Density on the Crystal and Electronic Structure of Epitaxial BaTiO3 Thin Films

Fugang Qi,Shaoqin Peng,Jiachang Bi,Shunda Zhang,Guanhua Su,Peiyi Li,Jiahui Zhang,Tengteng Zhang,Weisong Zhou,Ruyi Zhang,Yanwei Cao

DOI: https://doi.org/10.3390/cryst14040304

IF: 2.7

2024-03-27

Crystals

Abstract:Barium titanate (BaTiO3) is a promising material for silicon-integrated photonics due to its large electro-optical coefficients, low loss, high refractive index, and fast response speed. Several deposition methods have been employed to synthesize BaTiO3 films. Magnetron sputtering is one of these methods, which offers specific advantages for growing large-scale films. However, there is a scarcity of studies investigating the effect of sputtering target density on the quality of BaTiO3 films. Therefore, this study aims to uncover the effect of sputtering targets on the crystal and electronic structures of epitaxial BaTiO3 thin films. Two BaTiO3 ceramic targets were sintered at different densities by altering the sintering temperatures. The crystal structure and chemical composition of the targets were then characterized using X-ray diffraction, Raman spectroscopy, and scanning electron microscopy with energy-dispersive X-ray spectroscopy. Subsequently, BaTiO3 epitaxial films were grown by magnetron sputtering using these two targets. The crystal and electronic structures of the BaTiO3 films were analyzed using high-resolution X-ray diffraction, X-ray photoemission spectroscopy, atomic force microscopy, and spectroscopic ellipsometry. Notably, the BaTiO3 films grown with high-density targets show superior quality but contain oxygen vacancies, whereas those films synthesized with low-density targets display high surface roughness. These findings provide insights into the effect of sputtering target density on the crystal and electronic structures of epitaxial BaTiO3 thin films.

materials science, multidisciplinary,crystallography
Energy Gap, Penetration Depth, and Surface Resistance of Mgb2 Thin Films Determined by Microwave Resonator Measurements

BB Jin,N Klein,WN Kang,HJ Kim,EM Choi,SI Lee,T Dahm,K Maki

DOI: https://doi.org/10.1103/physrevb.66.104521

2002-01-01

Abstract:We have measured the temperature dependence of the microwave surface impedance Z(s)=R-s+iomegamu(0)lambda of two c-axis oriented MgB2 films employing dielectric resonator techniques. The temperature dependence of the magnetic-field penetration depth lambda determined by a sapphire dielectric resonator at 17.9 GHz can be well fitted from 5 K close to T-c by the standard BCS integral expression assuming the reduced energy gap Delta(0)/kT(c) to be as low as 1.13 and 1.03 for the two samples. For the penetration depth at zero temperatures, values of 102 and 107 nm were determined from the fit. Our results clearly indicate the s-wave character of the order parameter. A similar fit of the penetration depth data was obtained with an anisotropic s-wave BCS model. Within this model we had to assume a prolate order parameter, having a large gap value in the c-axis direction and a small gap within the ab plane. This is in contrast to recent fits of the anisotropic s-wave model to upper critical-field data, where an oblate order parameter had to be used, and raises interesting questions about the nature of the superconducting state in MgB2. A rutile dielectric resonator was employed to obtain the temperature dependence of R-s with high accuracy. Below about T-c/2, R-s(T)-R-s(5 K) exhibits an exponential temperature dependence with a reduced energy gap consistent with that determined from the penetration depth data. The R-s value at 4.2 K was found to be as low as 19 muOmega at 7.2 GHz, which is comparable with a high-temperature superconducting copper oxide thin film.
Influence of Thickness on the Electrical Properties of BaTiO3films Deposited on Ni Substrates by Radio-Frequency Magnetron Sputtering

Haigen Gao,Zhenxing Yue,Longtu Li

DOI: https://doi.org/10.1088/0022-3727/46/4/045307

2012-01-01

Journal of Physics D Applied Physics

Abstract:Radio-frequency magnetron sputtering was employed to grow BaTiO3 (BT) films on base metal Ni substrates. The dependence of electrical properties on thickness was investigated in the thickness range from 200 to 1160 nm from dielectric and alternating current (ac) impedance measurements. X-ray diffraction results show that a compressive stress is introduced due to the large difference in thermal expansion coefficients between BT and Ni, and it is reduced with increasing thickness. The capacitance density is reduced with increasing thickness, which is caused by a decrease in residual stress and grain size. Ac impedance spectra demonstrate that the electrical resistance of the BT film is attributed to electrode interfaces, grain boundaries and grains, and it is enhanced with increasing thickness. From impedance spectra analysis, the reduced oxygen vacancies in the vicinity of electrode interfaces and in each grain can be considered to be responsible for the enhanced resistance and reduced dielectric loss of the BT film with increasing thickness.
Study of Internal Friction on Size Effect in BaTiO3 Thin Films

JS Zhu,XM Lu,W Tian,YN Wang

DOI: https://doi.org/10.1051/jp4:19968172

1996-01-01

Abstract:The size effect on the phase transition was studied by a flexible resonance method in BaTiO3 thin films. The different transitional behaviors were observed in the measurements of internal friction in the films with different thickness. The stress in the films plays an important role in size effect of thin film. It was also confirmed by the measurement of Raman spectrum.
Grain size effect in BaTiO3 ultrafine powders and ceramics

Tianling Ren,Yuguo Wang,Huansui Zhao,Peilin Zhang,Weilie Zhong

1994-01-01

Abstract:BaTiO3 ultrafine powders were prepared by Sol-Gel method and ceramics with various grain size were obtained by firing the powders at different temperatures. The room temperature crystal structure was studied by X-ray diffraction. The temperature dependence of the dielectric constant is obtained using pressed powders as well as ceramics. Dielectric peaks show that when the grain size decreases, the Curie temperature decreases while the tetragonal-orthorhombic and orthorhombic-rhombohedral transition temperatures increase. With decreasing grain size, the three dielectric peaks lower and broaden and eventually disappear in the following sequence: rhombohedral-orthorhombic, orthorhombic-tetragonal and tetragonal-cubic. The critical size at which ferroelectricity disappears is determined by dielectric measurement. Its value is in agreement with that obtained by crystal ratio measurement in the literature.
The Thickness-Dependent Band Gap and Defect Features of Ultrathin ZrO2 Films Studied by Spectroscopic Ellipsometry.

Ji-Ping Xu,Rong-Jun Zhang,Yuan Zhang,Zi-Yi Wang,Lei Chen,Qing-Hua Huang,Hong-Liang Lu,Song-You Wang,Yu-Xiang Zheng,Liang-Yao Chen

DOI: https://doi.org/10.1039/c5cp05592j

2016-01-01

Abstract:The band gap and defect features of ultrathin ZrO2 films with varying thicknesses have been investigated by spectroscopic ellipsometry through the point-by-point data inversion method. The ε2-sprectra in the 3-6 eV range are extracted based on an optical model consisting of a Si substrate/effective ZrO2 film/air ambient structure where the effective ZrO2 film is a combination of interfacial layers and ZrO2. Evident widening of the band gap with a reducing size is observed when the effective ZrO2 films are below a critical thickness, somewhere between 8.80 nm and 17.13 nm. This is due to quantum-confinement and amorphous effects. Moreover, the sub-band-gap defects at interfacial layers and in bulk ZrO2 are identified and present strong thickness dependence as well. The interfacial defects at 3.26, 4.13, 4.43, and 4.77 eV mainly exist below the critical thickness and exhibit a significant suppression with increasing film thickness. The bulk defects at 4.15 eV and 4.46 eV dominate in ZrO2 films once they are over the critical thickness. The evolution of the band gap and defects is closely related to variance in the electronic structure of amorphous ZrO2. Our results may be helpful in understanding controversial problems concerning the size effect on ultrathin high-k oxide films and exploring the further miniaturization of electronic devices based on them.
The Effect of Grain Size on Domain Structure in Unsupported Thin Films

CJ Lu,SB Ren,HM Shen,JS Liu,YN Wang

DOI: https://doi.org/10.1088/0953-8984/8/42/019

1996-01-01

Journal of Physics Condensed Matter

Abstract:The effect of grain size on domain structure in unsupported PbTiO3 thin films with grains (70-250 nm) was studied by using TEM. It is found that there probably exists a critical grain size near 200 nm, at which an abrupt change in domain structure occurs. Above this size, domains, which are lamellar microtwins, appear in almost all of the coarse grains. The domain width decreases with grain size. Below this size, however, most of the grains are single-domain ones, while some irregular and curved domain walls appear only in a small portion of the fine grains. The number of the single-domain grains increases with decreasing grain size. Such a grain-size dependence of domain structure is correlated with the anomalous behaviours of the coercive field E(c) and dielectric constant epsilon(r) in ferroelectric thin films. This interesting result has not been reported before.
Grain Size Effect and Microstructure Influence on the Energy Storage Properties of Fine‐grained BaTiO3‐based Ceramics

Baibo Liu,Xiaohui Wang,Ruoxi Zhang,Longtu Li

DOI: https://doi.org/10.1111/jace.14802

IF: 4.186

2017-01-01

Journal of the American Ceramic Society

Abstract:The dependence of energy storage properties on grain size was investigated in BaTiO3-based ferroelectric ceramics. Modified BaTiO3 ceramics with different grain size were fabricated by two-step sintering method from BaTiO3 powders doped with Al2O3 and SiO2 by aqueous chemical coating. For samples doped with ZnO sintering aid in addition to Al2O3-SiO2, the density and breakdown strength increased significantly. In general, samples with smaller grains have lower polarization but higher energy storage efficiency. Al2O3-SiO2-ZnO-doped samples with average grain size of 118 +/- 2 nm have an energy density of 0.83 +/- 0.04J/cm(3). Obvious segregation of doping elements in second phase and grain boundary was observed by TEM-EDS. Impedance spectroscopy further explains the relationship between microstructure and properties. Compared to common energy storage ceramics, the grain size of this low-cost ceramics sintered at relatively low temperature is small, and the pilot scale production has been well completed. All these features make the utilization in multilayer devices and industrial mass production possible. In addition, the obtained rules are helpful in further development of energy storage ceramics.
Direct Observation of Thickness Dependence of Ferroelectricity in Freestanding BaTiO3 Thin Film

yueliang li,rong yu,huihua zhou,zhiying cheng,xiaohui wang,longtu li,jing zhu

DOI: https://doi.org/10.1111/jace.13749

IF: 4.186

2015-01-01

Journal of the American Ceramic Society

Abstract:In this work, we focus on the thickness dependence of the electric polarization in a freestanding BaTiO3 thin film. The locations of titanium and oxygen ions as well as their relative displacements were directly observed and measured by using aberration-corrected transmission electron microscopy (AC-TEM). It is found that the freestanding BaTiO3 thin film keeps the tetragonal distortion when its thickness is thicker than 4.8nm, while completely loses its ferroelectricity when thinner than 4.4nm. The method of combining high-resolution AC-TEM imaging with the multiparameter simulation unit cell by unit cell was developed to accurately determine each local thickness of the sample. This method is powerful for quantitative analysis in AC-TEM images.
Structure, Electrical, Optical and Magnetoelectric Properties of Magnetron Sputtered Nanocrystalline NiFe/BaTiO3 Thin Films

Min Zhang,Xun Zhou,Xu Wang,Chaoyong Deng

DOI: https://doi.org/10.1016/j.ceramint.2021.08.009

IF: 5.532

2021-01-01

Ceramics International

Abstract:BaTiO3 (BTO) and NiFe films grown on SrTiO3 (STO), Nb:SrTiO3 (NSTO), and ITO-glass substrates were prepared by radio-frequency (RF) and direct-current (DC) magnetron sputtering, respectively. The microstructure, fermelectricity, leakage current, magnetoelectric (ME) coupling, ultraviolet-visible light spectrum, optical band gap, ellipsometry spectrum and surface morphology of the composite film are characterized by XRD, ferroelectric analyzer, ME coupling test system, U-4100, Horiba Smart SE and AFM. In addition, the stress, strain and piezoelectric voltage of the magnetoelectric composite film under the action of DC and AC magnetic fields are simulated by COMSOL multiphysics software. The experimental results show that the prepared composite film is polycrystalline, the surface roughness of the film is better, and the particles are uniform. The magnetoelectric coupling voltage gradually increases with the increase of the value of the DC magnetic field and the frequency of the AC magnetic field, and it has a larger absorption (about 0.3) at 340 nm. In addition, the simulation results also show the relationship between the coupling voltage V-ME and the applied magnetic field H.
Thickness-Dependent Electrical Characteristics of Sputtered BFO Thin Films over Wide Temperature Range

Shah Zahid Yousuf,Sreenivasulu Mamilla,N. V. L. Narsimha Murty

DOI: https://doi.org/10.1080/00150193.2023.2296304

2024-02-14

Ferroelectrics

Abstract:This study explores how thickness and grain size impact leakage current in RF-sputtered BFO thin films. Morphology reveals that increasing film thickness leads to larger grains, boosting grain resistivity by altering oxygen vacancies, thus reducing leakage current. Pt/Ti/BFO/FTO capacitive heterostructures are examined at varied temperatures, demonstrating a positive temperature coefficient of resistance effect. This effect stems from the closely linked interaction between multiferroic BFO and highly conductive oxide FTO, and potentially forming an electrical double layer at the Pt/Ti/BFO interface. Additionally, a dominant modified Space Charge Limited Current conduction mechanism is observed in Pt/Ti/BFO/FTO capacitive heterostructures under varying electric fields.

materials science, multidisciplinary,physics, condensed matter

The Energy Gap of Rf-Sputtered Batio3 Thin Films with Different Grain Size and Thickness

The energy gap of r.f.-sputtered BaTiO3 thin films with different grain size

Optical Study on the Size Effects in Batio3 Thin Films

Size Effects in BaTiO3 Thin Films

Determination Of Refractive Indices And Thicknesses Of Ba0.7sr0.3tio3 Films With And Without Mgo (001) Buffer Layer On Silicon Substrate

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Size Effects on Structure and Raman Spectra of BaTiO3 Thin Films

Structural, electrical and optical properties of transparent conductive titanium–gallium–zinc oxide films by magnetron sputtering

High-Resolution Electron Energy-Loss Spectroscopy Of Batio3/Srtio3 Multilayers

Grain Size Effect on Structures and Dielectric Constants for Nanocrystalline Batio3 Ceramic

The Effect of Sputtering Target Density on the Crystal and Electronic Structure of Epitaxial BaTiO3 Thin Films

Energy Gap, Penetration Depth, and Surface Resistance of Mgb2 Thin Films Determined by Microwave Resonator Measurements

Influence of Thickness on the Electrical Properties of BaTiO3films Deposited on Ni Substrates by Radio-Frequency Magnetron Sputtering

Study of Internal Friction on Size Effect in BaTiO3 Thin Films

Grain size effect in BaTiO3 ultrafine powders and ceramics

The Thickness-Dependent Band Gap and Defect Features of Ultrathin ZrO2 Films Studied by Spectroscopic Ellipsometry.

The Effect of Grain Size on Domain Structure in Unsupported Thin Films

Grain Size Effect and Microstructure Influence on the Energy Storage Properties of Fine‐grained BaTiO3‐based Ceramics

Direct Observation of Thickness Dependence of Ferroelectricity in Freestanding BaTiO3 Thin Film

Structure, Electrical, Optical and Magnetoelectric Properties of Magnetron Sputtered Nanocrystalline NiFe/BaTiO3 Thin Films

Thickness-Dependent Electrical Characteristics of Sputtered BFO Thin Films over Wide Temperature Range