Abstract:At present various oxide of metal semiconductors play a significant role in the field of electronics. Most of the semiconductor devices exploit the special characteristics of the junction between a p-type and n-type semiconductor. These devices can be made extremely small in size and they are incredibly fast in their response. Generally metal have good reflectivity in the electromagnetic region of infrared and visible radiation. Indium oxide material doped with tin (ITO) is recently used in the substrate material for various applications, because it has special properties of low resistivity and high optical transmittance in the visible region. In this paper, we prepare ITO films with different tin concentration (5%, 10%, 15%, 20%, 30%, 40%, 50%, 60% and 70%) using acrylamide sol gel dip coated method and its results were reported. TCO materials have good electrical conductivity and optical transparency, and also it has n-type semiconductor with a band gap between 3.5 and 4.3 eV. An X-ray study indicates all the prepared samples had bixbyte structure. Optical behaviour of materials can be understood in the near infrared and visible spectrum. Some optical parameters of refractive index, extinction coefficient and dielectric constant of ITO films are calculated from the data received from the UV transmission studies. Using W-D model the dispersion of refractive index was calculated. The optical band gap, oscillator energy, dispersion energy and optical conductivity and N/m* ratio were estimated and this material is well suitable for dye sensitized solar cell and sensor application.

Description of Surface Roughness of Sol–gel Films/coatings by X-ray Reflectivity Technique

Grazing incidence X-ray scattering study of sol–gel derived indium tin oxide thin films

Thin Indium-Tin-Oxide Film Produced Through Sol–Gel Method with Its Morphological and Electrical Properties

The key of ITO films with high transparency and conductivity: Grain size and surface chemical composition

Optical performance of Tin doped Indium Oxide (ITO) thin films prepared by sol gel dip coating techniques using acrylamide route

Preparation of indium tin oxide (ITO) thin film with (400) preferred orientation by sol–gel spin coating method

Optical Property and the Relationship Between Resistivity and Surface Roughness of Indium Tin Oxide Thin Films

Surface Characterization of Ag–ITO Cermet Films Prepared by a New Sol–gel Method

In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry

Correlation between microstructure and electrical, optical properties of thermal annealed ITO thin films

X-Ray Photoelectron Spectroscopy Studies Of Indium-Tin-Oxide Treated Via Oxygen Plasma Immersion Ion Implantation

Evaluation of electrical resistivity, residual stress and surface roughness of sputtering indium tin oxide films with different thicknesses

Characterization of nanocrystalline indium tin oxide thin films prepared by ion beam sputter deposition method

TiO2 THIN FILMS PREPARED BY SPIN COATING TECHNIQUE

Synchrotron Radiation Photoelectron study of ITO surface

Surface Morphology Modelling for the Resistivity Analysis of Low Temperature Sputtered Indium Tin Oxide Thin Films on Polymer Substrates

Small Angle X-ray Scattering Studies on Structural Evolution During Calcination of Sol–gel ITO Nano-Powders

Preparation of ITO Thin Films Through Level Sedimentation and Its Photoelectric Properties

Study on the cracking of SiO2-TiO2 films prepared by sol-gel method

Angle dependent X-ray photoemission study on UV-ozone treatments of indium tin oxide

Compatible Low Target Feature Coatings