Abstract:Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices on-chip. In particular Indium Tin Oxide (ITO) is found to have refractive index changes on the order of unity. This property makes it possible to achieve electro-optic modulation of sub-wavelength device scales, when thin ITO films are interfaced with optical light confinement techniques such as found in plasmonics; optical modes are compressed to nanometer scale to create strong light-matter-interactions. Here we review efforts towards utilizing this novel material for high-performance and ultra-compact modulation. While high performance metrics are achieved experimentally, there are open questions pertaining the permittivity modulation mechanism of ITO. Furthermore, we show that a footprint-saving waveguide inline cavity can enhance obtainable extinction-ratio to insertion-loss ratios by about one order of magnitude over non-cavity based version. Moreover, we offer a speed analysis that shows that the device is resistance limited, but not capacitance or drift-carrier limited. Interestingly, two bias options exist for ITO and we find that a side-connection enables devices that should in principle enable several hundred of GHz fast devices, using our routinely achievable ITO film resistivities. Finally, we offer a brief discuss about footprint savings of compact ITO modulators showing a 3-orders of magnitude smaller footprint over Silicon photonic MZI-based modulators.

Compatible Low Target Feature Coatings

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Theoretical Design of a Multilayer Based Spectrally Selective Solar Absorber Applied under Ambient Conditions

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Optical performance of Tin doped Indium Oxide (ITO) thin films prepared by sol gel dip coating techniques using acrylamide route

Electrical and optical properties of ITO thin films prepared by DC magnetron sputtering for low-emitting coatings

Theoretical Study of Infrared Emissivity of Indium Tin Oxide Films

Influence of film thickness on the texture, morphology and electro-optical properties of indium tin oxide films

Indium-Tin-Oxide for High-performance Electro-optic Modulation

Thin Indium-Tin-Oxide Film Produced Through Sol–Gel Method with Its Morphological and Electrical Properties

Wideband optically transparent absorber based on multilayer ITO films with high absorption rate

Design and Fabrication of Indium Tin Oxide for High Performance Electro-Optic Modulators at the Communication Wavelength

Controllable Modulation of Surface Plasmon Resonance Wavelength of ITO Thin Films

Indium Tin Oxide film characterization using the classical Hall effect

Improved visible transparency of SIO2/ZNO:AL /CEO2-TIO2/SIO2 multilayer films with high UV absorption and infrared reflection rate

Effect of oxygen stoichiometry on the structure, optical and epsilon-near-zero properties of indium tin oxide films.

The key of ITO films with high transparency and conductivity: Grain size and surface chemical composition