Abstract:Semiconductor nanowires (NWs) show tremendous applications in micro/nano-electro-mechanical systems. In order to fulfill their promising applications, an understanding of the mechanical properties of NWs becomes increasingly important. Based on the large-scale molecular dynamics simulations, this work investigated the tensile properties of Si NWs with different faulted stacking layers. Different faulted stacking layers were introduced around the centre of the NW by the insertion or removal of certain stacking layers, inducing twins, intrinsic stacking fault, extrinsic stacking fault, and 9R crystal structure. Stress–strain curves obtained from the tensile deformation tests reveal that the presence of faulted stacking layers has induced a considerable decrease to the yield strength while only a minor decrease to Young's modulus. The brittle fracture phenomenon is observed for all tested NWs. In particular, the formation of a monatomic chain is observed for the perfect NW, which exists for a relatively wide strain range. For the defected NW, the monatomic chain appears and lasts shorter. Additionally, all defected NWs show a fracture area near the two ends, in contrast to the perfect NW whose fracture area is adjacent to the middle. This study provides a better understanding of the mechanical properties of Si NWs with the presence of different faulted stacking layers.

Transmission electron microscopy evidence of the defect structure in Si nanowires synthesized by laser ablation

Thermal Conductivity of Si Nanowires with Faulted Stacking Layers

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Ultrafast growth of single-crystalline Si nanowires

Transmission Electron Microscopy Study of Si Nanowires

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Growth morphology and micro-structural aspects of Si nanowires synthesized by laser ablation

Crystal Growth of Si Nanowires and Formation of Longitudinal Planar Defects

Silicon Nanowires Prepared by Laser Ablation at High Temperature

Silicon Nanowire: a New Shape of Crystalline Silicon

Synthesis and Raman Spectra of Si-Nanowires

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

A Simple Route To Annihilate Defects In Silicon Nanowires

Tiny silicon nano-wires synthesis on silicon wafers

Synthesis of Nano-Scale Silicon Wires by Excimer Laser Ablation at High Temperature

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Array-orderly single crystalline silicon nano-wires

TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires

Nanoscale experimental study of the morphology of a microcrack in silicon by transmission electron microscopy