Colossal Magnetoresistive P-N Junctions of Te-Doped Lamno3/Nb-Doped Srtio3

HB Lu,SY Dai,ZH Chen,LF Liu,HZ Guo,WF Xiang,YY Fei,M He,YL Zhou,GZ Yang

DOI: https://doi.org/10.1088/0256-307x/20/1/341

2002-01-01

Abstract:We have fabricated colossal magnetoresistive (CMR)-p-n junctions made of Te-doped LaMnO3 and Nb-doped SrTiO3 with laser molecular beam epitaxy. The I-V characteristics of the La0.9Te0.1MnO3/SrNb0.01Ti0.99O3 p-n junctions as a function of applied magnetic field (0-5 T) were experimentally studied in the temperature range 77-300K. The results indicate that the p-n junction exhibited the CMR behaviour. The magnetoresistance (MR) is positive at 220 K and 300 K, while it displays a negative MR at 77 K. For a positive bias, the MR ratios (DeltaR/R-0, R = R-H - R-0) are 7.5% at 0.1 T and 18% at 5 T for 300 K, 5% at 0.1 T and 33% at 5T for 220 K, -14% at 0.1 T and -71% at 5 T for 77 K. For a negative bias, the MR ratios are 6.3% at 0.1 T and 10.8% at 3,T for 300 K, 5.1% at 0.1 T and 15% at 3 T for 220 K, -19% at 0.1 T and -72% at 5T for 77 K. The CMR behaviour of the p-n junction is different from those of the LaMnO3 compound family.