Abstract:An atmospheric pressure mist chemical vapor deposition (mist-CVD) system has been developed to prepare zinc oxide (ZnO)-based thin films. This is a promising method for large-area deposition at low temperatures taking into account of its simplicity, inexpensiveness, and safety. Nominally pure ZnO, Al-doped n-type ZnO (ZnO:Al), and N-doped p-type ZnO (ZnO:N) thin films, as well as Zn1−xCdxO and Zn1−yMgyO alloy films, have been deposited by this mist-CVD system. The films deposited at the temperatures ranging from 400 to 500°C were of an acceptable crystallinity with (002) preferential orientation and homogeneous surface. All the films exhibited high transmittance of about 90% in visible regions and dominant UV emission in the photoluminescence spectra. The n-type ZnO:Al films had a low resistivity of 1.08×10–3Ωcm at an optimal Al content of 4at%. The p-type conductivity was obtained in ZnO:N films annealed at higher temperatures with a resistivity of 72.8Ωcm, Hall mobility of 2.28cm2V−1s−1, and hole concentration of 3.76×1016cm−3, as confirmed by Hall-effect measurements. A hydrogen-assisted nitrogen-doping mechanism was proposed to answer for the realization of p-type conductivity in ZnO. The films of Zn1−xCdxO and Zn1−yMgyO ternary alloys were also deposited by this technique. The band gap energies, for instance, were 3.05eV for Zn1−xCdxO (x=0.06), 3.28eV for ZnO, and 3.56eV for Zn1−yMgyO (y=0.11), as confirmed by the optical absorption spectra. The band gap engineering could be readily realized in the ZnO system using mist-CVD.

Preparation of BaTiO3 thin films by mist plasma evaporation on MgO buffer layer

Dielectric Properties Of Ba0.6sr0.4tio3 Thin Films Deposited By Mist Plasma Evaporation Using Aqueous Solution Precursor

Preparation of Nano-Structured BaTiO3 Thin Film by Electrophoretic Deposition and Its Characterization

Zno-based Thin Films Synthesized by Atmospheric Pressure Mist Chemical Vapor Deposition

Dielectric Properties of Bati2o5 Thick Films Prepared on Pt-Coated Mgo (110) Single-Crystal Substrate by Laser Chemical Vapor Deposition

BaTiO3 on LaNiO3 and Si thin films prepared by mist plasma evaporation

Crystallographic Texture of MgO and its Effect on the Growth of BaTiO<sub>3</sub> Thin Films by RF Sputtering

Preparation of A Monodispersed Suspension of Barium Titanate Nanoparticles and Electrophoretic Deposition of Thin Films

Low-temperature synthesis of barium titanate thin films by nanoparticles electrophoretic deposition

Control of VO•• ∼ TiTi′ Dipole Pairs As Well As MgTi″ Defects on Dielectric Properties of Mg Doped (pb0.35sr0.65)tio3 Thin Film

Influence of Different Substrates on MgTiO_3-CaTiO_3 Thin Films Prepared by RF Sputtering

BaTiO3 Film Optical-Waveguide Prepared by Pulsed Laser Deposition

Low-temperature Preparation of BaTiO 3 Thin Film by MOD and Hydrothermal Treatment

Preferred Orientation Growth of Ba0.6Sr0.4TiO3 Thin Films with Epitaxial MgO Buffer Layer on Si(100) Substrate

Crystallization of BaTiO<sub>3</sub> Thin Films Prepared by Metalorganic Decomposition with Hydrothermal Treatment at 140°C

Preparation Of Epitaxial Pbtio3 Thin-Films By Metalorganic Vapor-Phase Epitaxy Under Reduced Pressure

(Ba,sr)tio3 Thin Film Growth in A Batch Processing Mocvd Reactor

Low-Temperature Deposition of Pb ( Zr , Ti ) O 3 Thin Films on Si Substrates Using Ba ( Mg 1 = 3 Ta 2 = 3 ) O 3 as Buffer Layer

Electrophoretic deposition of BaTiO3 films from aqueous suspensions

Preparation and Structure of Ba(Mg 1/3 Ta 2/3 )O 3 Thin Films Derived from a Sol-Gel Process

Preparation of Ba0.5Sr0.5TiO3 film by microarc oxidation