Abstract:A systematic spectroscopic study on the interfaces between the organic molecular semiconductor and the (110) phase of the doped polysilicon has been carried out using valence and core-level photoemission spectroscopy. All photoemission spectra (UPS/XPS) exhibited shifts in the positions of the peaks following the deposition of the organic films. A set of clearly resolved valence band features is found associated to the dispersion of the molecular orbitals. The nonexistence of Fermi edge in the FePc films is thought to account for its semiconducting nature. The thickness dependent change in the work function of the substrate is noticed and a minute amount of charge transfer is found. The asymmetric C1s peak is resolved into three components, reflecting photoemission from multiple sites within the organic molecule. A larger shift in the benzene carbon (Cb) as compared to the pyrrole carbon (Cp) peak suggests that more charge transfers from the former carbon to the substrate. The observed negative sign of the sizable interface dipole potential indicates that the guest molecule and the hosting substrate have donor and acceptor character, respectively. Furthermore, the dipole width, i.e. d=1.35Å, is determined on the basis of the measured quantities and basic physics.

Properties of Fe/Si Heterostructure Grown by Mocvd

Studies on the Heterostructure of Fe Film on Si Substrate

/spl beta/-FeSi/sub 2/ formation on MOCVD Fe/Si(100) by solid phase epitaxy

Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation

Epitaxial Electrodeposition of a Crystalline Metal Oxide onto Single-Crystalline Silicon

Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer

Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces

Epitaxil Electrodeposition Of A Crystalline Metal Oxide Onto Single-Crystalline Silicon

Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides

Growth and Physical Properties of BiFeO3 Thin Films Directly on Si Substrate

A systematic spectroscopic study of the FePc–Si interfaces

High-quality Carbon-Doped Β-Type FeSi2 Films Synthesized by Ion Implantation

Semiconducting Ge–Si–Fe Alloy Grown on Si(100) Substrate by Reactive Deposition Epitaxy

Direct Growth of Continuous and Uniform MoS2 Film on SiO2/Si Substrate Catalyzed by Sodium Sulfate.

Rectifying Property and Giant Positive Magnetoresistance of Fe3O4∕SiO2∕Si Heterojunction

Structure and Magnetism of Fe/Si Multilayers Grown by Ion-Beam Sputtering

Growth of atomically thick transition metal sulfide filmson graphene/6 H -SiC(0001) by molecular beam epitaxy

Solid Phase Epitaxy of Beta-Fesi2 on Si(100)

Epitaxial Growth of a Full-Heusler Alloy Co$_{2}$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy

Magnetic Properties of Fe0.95co0.05si2 Semiconducting Film

Electronic States at the First Stages of Epitaxial Growth of Fe Silicides on Si(111)7 X 7