Abstract:Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method. In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga degrees C.Temperature is the metals at a low growth temperature of 550 d critical experimental parameter for the formation of Ga-dope the ZnO nanowires.This evaporation process can be attributed to Ga dopant In the lattice position of he ZnO nanowires. As shown In scanning electron microscopy (SEM), nanowires of different diameters are evenly arranged on the Si substrate and nucleated via a self-catalysed mechanism by depositing a layer of ZnO film as the crystallization plant before growing ZnO nanowires on the film. Self-catalyzed growth of Ga-doped ZnO nanowires are of diameters 35-150nm and lengths up to several ones of micrometers. High resolution Transmission electron microscope (HRTEM) those lattice image of Ga doped ZnO nanowires, wherein nanowires are seen a lattice of a=3.25 angstrom and c=5.19 angstrom. As determine by selected area diffraction (SAD), the growth direction of Ga-doped ZnO nanowires is [001] and the nanowire consists of single-crystailline ZnO crystals.The luminescence spectra of the Ga-doped ZnO nanowires exhibit a UV band at 374nm and a strong green band at 498nm. In addition, the Ga-doped ZnO nano,wires with different diameters have a larger green light/UV ratio due to the recombination of holes with the electrons occupying the singly ionized more O vacancies that are larger In number. By virue of the doping of Ga, we observe that Ga-doped ZnO nanowires becomes broader and shifts to a longer wave 498nm at a lower energy and a strong green emission as compared to the undoped one in the cathodoluminescence and photoluminescence spectra. The Ga-doped ZnO nanowires; have a greater field-enhancement factor than the undoped ZnO nanowies. The Ga-doped ZnO nanowires with a low turn on field (12V mu m(-1)) are apparently lower than the undoped ZnO nanowires. Our results demonstrate that Ga-doped ZnO nanowires can provide the possibility of application In optoelectric nanodevices.

Fabrication, Structural Characterization, and Photoluminescence of Ga-doped ZnO Nanobelts

Characterization of Ga-doped ZnO Nanowires Grown by Thermal Chemical Vapor Deposition

Photoluminescence of Ga-doped ZnO Nanorods Prepared by Chemical Vapor Deposition

Effects of Ga doped seed layer on microstructural and optical properties of ZnO nanorods

Enhanced Photocatalytic Activity of ZnO Nanorods Grown on Ga Doped Seed Layer

Enhanced Field Emission Performance of Ga-Doped In2o3(Zno)(3) Superlattice Nanobelts

Field Emission and Optical Properties of Ga-doped ZnO Nanowires Synthesized Via Thermal Evaporation

Sol-gel Derived Al and Ga Co-Doped ZnO Nanoparticles: Structural, Morphological and Optical Investigation

Fabrication and Luminescence Properties of ZnO Nanostructure/p-GaAs

Synthesis and optoelectronic properties of Ga-doped ZnO nanorods by hydrothermal method

Synthesis of In-Doped Znga2o4 Nanobelts and Its Enhanced Cathodoluminescence

Suppression of Visible Light Emission of Zno Nanostructures by Ga-Doping

Preparation and Photoluminescence of ZnO with Nanostructure by Hollow-Cathode Discharge

Fabrication and Optical Properties of Mn-Doped ZnO Nanowires

Microstructure, Optical and Photoluminescence Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition

Indium-doped Zinc Oxide Nanobelts

Manipulating Optical Properties of Zno/Ga:Zno Core-Shell Nanorods Via Spatially Tailoring Electronic Bandgap

Gallium Doping Dependence of Single-Crystal N-Type Zno Grown by Metal Organic Chemical Vapor Deposition

Fabrication and characterization of Mg-doped ZnO nanorod arrays.

Fabrication and Piezoelectric Characterization of Single Crystalline GaN Nanobelts

Structural, Morphological, Optical and Electrical Properties of Ga-doped ZnO Transparent Conducting Thin Films