Abstract:The proposed subthreshold CMOS voltage reference based on stacked diode‐connected MOS transistors (SDMTs) includes temperature compensation circuits to expand its operating temperature range and reduce its temperature coefficient. This work demonstrates excellent performance characteristics and is well‐suited for low‐voltage and low‐power IoT self‐powered sensor applications. Summary This paper presents a subthreshold CMOS voltage reference (VR) that utilizes self‐biased circuits. This voltage reference includes temperature compensation circuits to expand its operating temperature range and reduce its temperature coefficient. The proposed CMOS voltage reference is designed using a standard 0.18‐μm CMOS process and has a small area of only 0.005 mm2. Post‐layout simulation results demonstrate that the power consumption of the circuit at room temperature (25°C) is only 1.65 nW at a power supply voltage of 1 V. In this case, the voltage reference output is 316.56 mV, with an average temperature coefficient (TC) of 11.14 ppm/°C in a wide temperature range from −40°C to 140°C. Furthermore, the line sensitivity (LS) of the circuit is 0.024%/V, and the power supply rejection ratio (PSRR) of the circuit is −86.5 dB at 10 Hz. In summary, the subthreshold CMOS voltage reference structure proposed in this paper demonstrates excellent performance characteristics, such as low power consumption, a small area, and high‐temperature stability. These features make it a promising candidate for voltage reference for low‐power applications with significant changes in environmental temperature.

CMOS voltage reference based on weighted ΔVGS

Sub-1V CMOS Voltage Reference Based on Weighted Vgs

New Technique: A Low Drift Current Reference Based on PMOS Temperature Correction Technology.

Super Performance CMOS Band-Gap Voltage Reference

A Low Drift Curvature-Compensated Bandgap Reference with Trimming Resistive Circuit

Novel CMOS Current Reference with High Power-Supply Rejection Ratio

A Sub-1-V Nanopower MOS-Only Voltage Reference

A Low-Power Voltage Reference Source for Lithium Battery Protection ICs

A CMOS Voltage Reference Based on Mutual Compensation of Vtn and Vtp

A 1.65‐nW 11.14‐ppm/°C self‐biased subthreshold CMOS voltage reference with temperature compensation circuit

A sub-1-V ultra-low power full CMOS bandgap reference woking in subthreshold region

A Novel Low-power Low-voltage Reference

A voltage reference circuit with ultra-low power using subthreshold and body effect techniques

Improved Design of a Super Low Voltage Reference

A sub-1 V 115nA 0.35μm CMOS voltage reference for ultra low-power applications

A Low-Voltage All-Metal Oxide Semiconductor Voltage Reference with Ultra-Low Power

Design of Voltage–Current Reference Source in CMOS Technology

A 0.5 V, 650 Pw, 0.031%/V Line Regulation Subthreshold Voltage Reference

A nanopower CMOS bandgap reference with 30ppm/degree C from -30 degree C to 150 degree C.

A 5.5nw Voltage Reference Circuit

A Resistorless CMOS Voltage Reference Based on Mutual Compensation of $V_{T}$ and $v_{\rm TH}$