Abstract:Rare-earth ions in solid-state hosts exhibit low homogeneous broadening and long spin coherence at cryogenic temperatures thus making them a promising candidate for optical quantum memories [1], optical-microwave transducers [2] and single dopant-based devices such as single photon emitters operating at the telecommunication wavelengths [3]. Here, we present an overview of the spin and optical properties of Er ensembles in Si accessed via resonant photoluminescence excitation (PLE) spectroscopy [4]. Samples were positioned directly on top of tailor-fabricated superconducting single photon detectors, placed in a dilution refrigerator unit and resonantly excited using fiber optics. Our method provided high collection efficiency and allowed spectral measurements of low Er density samples. The observed Er PLE spectra were strongly affected by the presence of co-dopants such as O, B or P reflecting their influence on the formation of optically active Er sites and corresponding Er optical transition energies. Higher O densities resulted in especially rich PLE spectra suggesting that a variety of Er-O complexes formed due to O doping. Lowering the O concentration, we achieved PLE spectra dominated by a single Er site in P doped samples. Interestingly, the Er spin relaxation and optical coherence properties were barely affected by the employed co-dopants and mainly depended on the Er concentration. By lowering the Er concentration from relatively high (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">18</sup> cm-3) to low densities (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> cm-3), we were able to increase Er spin lifetimes from ~0.1 s to ~30 s. Long spin relaxation times allowed us to identify PLE spectra of new Er sites in Si. In both concentration regimes, we observed sub-MHz transient spectral holes suggesting long optical coherence times. Furthermore, we observed sub-MHz spin transitions in both natural and isotopically purified Si and achieved spin coherence times above 1 ms in isotopically purified Si. Narrow optical linewidths and long transverse and longitudinal spin relaxation times show that Er in Si is an excellent candidate for future quantum information and communication applications.

The Strong Correlation Of The 4f Electrons Of Erbium In Silicon

First principles study of the electronic structures of erbium silicides with non-frozen 4f treatment

Characterization of the spin and crystal field Hamiltonian of erbium dopants in silicon

Role of Codopant Oxygen in Erbium-Doped Silicon

Zeeman and hyperfine interactions of a single <SUP>167</SUP>Er<SUP>3+</SUP> ion in Si

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Interaction Between Er Atoms and the Carbon Cagec82

Distinguishing erbium dopants in Y$_2$O$_3$ by site symmetry: \textit{ ab initio} theory of two spin-photon interfaces

Optical and Zeeman spectroscopy of individual Er ion pairs in silicon

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Prediction of the Optical Polarization and High Field Hyperfine Structure Via a Parametrized Crystal-Field Model for the Low Symmetry Centers in Er$^{3+}$ Doped Y$_{2}$SiO$_{5}$

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

A Pathway to Er Sites in Si with Long Spin and Optical Coherence Times

The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si

Mechanism on Exciton-Mediated Energy Transfer in Erbium-Doped Silicon

Optical and microstructural characterization of Er$^{3+}$ doped epitaxial cerium oxide on silicon

High Energy Spectroscopy of Rare Earth Ions

Localization for 4f electrons in a heavy fermion compound CeCu2Si2: Insights from dynamical mean-field theory

Role of strong correlation and spin-orbit coupling in $\textrm{LuB}_{4}$: a first principle study

Effect of Erbium Incorporation on SiNxOy/c-Si Interface in Silicon-Based Optoelectronic Devices