Abstract:The light yield of the as-grown PbWO4, annealed PbWO4 and BaF2:PbWO4 crystals were raised by utilizing our improved crystal growth instrument and technique. Their scintillating properties including transmittance, decay time and light yield were studied. Results reveal that the scintillating performances of the crystals were improved evidently by using the crystal annealing technique and the ions doping technique, especially the negative ions doping technique. The influence results of the two techniques are different. The ions doping technique raises their transmittance intensity in the whole measuring wavelength range. But the influence of annealing PbWO4 crystal on their transmittance is complicated. It improves its transmittance intensity at the wavelength above 360 nm, but weakens the transmittance intensity of the annealed PbWO4 crystal in the wavelength range from 320 to 360 nm. These phenomena should be related to the crystal defects which have absorption peaks in this wavelength range, especially for V(Pb)3+ defect which has characterized absorption peaks in this wavelength range. Also, the absorption of the defects influences the character of the decay time of these crystals. The big defect concentration relates to the short decay time. It should be mentioned that the ions doping technique reduces the defect content in the crystal, which is beneficial to the high transmittance intensity but induces slightly longer decay time than that of as-grown crystal and well annealed PbWO4 crystal. Also, the ions doping technique of the F- ion doped crystal leads to high light yield. The annealing technique and ions doping technique improve the light yield of crystals. The light yield of BaF2:PbWO4 reaches 65 p.e./MeV, which is near to the requirement of PET. The good result is related to the degeneration of the [WO4]2- tetrahedron induced by the F- occupying the O2- site in the crystal cell.

Study on Growth and Luminescence Properties of PbWO_4 Crystal Doped with Negative Ions

Study of Scintillating Luminescence Spectra of Lead Tungstate Scintillation Crystal Doped with Ions

Improvement on the luminescence property of Y, Sb Co-doped PbWO4 single crystal

Improvement of Luminescence Performance of PbWO4 Crystal by Nb2O5-Doping

Improvement of Luminescent Properties of Pbwo4 by Doping with Gd3+ Ions

Influence of Sb Doping on the Luminescent Properties of PbWO4 Single Crystals

The Influences of Monovalent Ions on the Stability of Scintillation Properties and Radiation Hardness of PbWO4:Y3+ Crystals

Study on PbWO4 doped with Y, Sb

The Optical Properties of Scintillation PbWO4 Crystal Doped with BaF2

EXAFS Study on the Lanthanum Ion Doped PbWO4 Crystal

Influence of Sb on the Scintillation Properties of Lead Tungstate Crystal

Influence of Trivalent Ions Codoping on the Mo:PbWO4 Luminescence Properties

The Study of Light Yield Increase after Low Dose Rate Irradiation in Y3+ Doping PbWO4 Crystals

Birefringence in heavily Li-doped and La-doped PbWO4 single crystals

Synthesis, Growth And Doped Properties Of Pbwo4 Crystals

Influence of Y Doping on the Scintillation Properties of PbWO4 Single Crystals

First‐principles Study of PbWO4 Crystal with Interstitial Oxygen Atoms

Enhancement in Luminescence of NaIn(WO[sub 4])[sub 2] Via Bismuth Doping

Bright Luminescence of Sb Doping in All-Inorganic Zinc Halide Perovskite Variant

Effect of sintering temperature on the structural and luminescence properties of Er doped PbWO 4 microcrystals

Effect of Lead Vaporization in Growth Process on the Luminescence Property of PbWO4 Crystal