Abstract:The light yield of the as-grown PbWO4, annealed PbWO4 and BaF2:PbWO4 crystals were raised by utilizing our improved crystal growth instrument and technique. Their scintillating properties including transmittance, decay time and light yield were studied. Results reveal that the scintillating performances of the crystals were improved evidently by using the crystal annealing technique and the ions doping technique, especially the negative ions doping technique. The influence results of the two techniques are different. The ions doping technique raises their transmittance intensity in the whole measuring wavelength range. But the influence of annealing PbWO4 crystal on their transmittance is complicated. It improves its transmittance intensity at the wavelength above 360 nm, but weakens the transmittance intensity of the annealed PbWO4 crystal in the wavelength range from 320 to 360 nm. These phenomena should be related to the crystal defects which have absorption peaks in this wavelength range, especially for V(Pb)3+ defect which has characterized absorption peaks in this wavelength range. Also, the absorption of the defects influences the character of the decay time of these crystals. The big defect concentration relates to the short decay time. It should be mentioned that the ions doping technique reduces the defect content in the crystal, which is beneficial to the high transmittance intensity but induces slightly longer decay time than that of as-grown crystal and well annealed PbWO4 crystal. Also, the ions doping technique of the F- ion doped crystal leads to high light yield. The annealing technique and ions doping technique improve the light yield of crystals. The light yield of BaF2:PbWO4 reaches 65 p.e./MeV, which is near to the requirement of PET. The good result is related to the degeneration of the [WO4]2- tetrahedron induced by the F- occupying the O2- site in the crystal cell.

The Influences of Monovalent Ions on the Stability of Scintillation Properties and Radiation Hardness of PbWO4:Y3+ Crystals

Luminescence Properties of Yb2+ Doped NaBaPO4 Phosphate Crystals

The Origin of Radiation Instability in Yttrium-Ion-Doped Lead Tungstate Crystals

The Study of Light Yield Increase after Low Dose Rate Irradiation in Y3+ Doping PbWO4 Crystals

Influence of Y Doping on the Scintillation Properties of PbWO4 Single Crystals

Low dose rate irradiation behaviors of Y3+-doped PbWO4 crystals

Study on Radiation Damage of Lead Tungstate Crystals

Influence of Sb on the Scintillation Properties of Lead Tungstate Crystal

Study of Scintillating Luminescence Spectra of Lead Tungstate Scintillation Crystal Doped with Ions

Improvement on the luminescence property of Y, Sb Co-doped PbWO4 single crystal

Synthesis Process and Luminescence Properties of Ln3+ Doped NaY(WO4)2 Nanoparticles

Influence of Gd3+ and Y3+-Doping on Low Temperature Thermoluminescence of Pbwo4

Effect of Li ions on structure and spectroscopic properties of NaY(WO4)2: Yb/Ho phosphor

Doping-induced Evolutions of PbWO4 Mesocrystals and Their Optical Properties

Influence of Sb Doping on the Luminescent Properties of PbWO4 Single Crystals

Effect of Eu Ions Concentration in Y2O3-Based Transparent Ceramics on the Electron Irradiation Induced Luminescence and Damage

Study on Growth and Luminescence Properties of PbWO_4 Crystal Doped with Negative Ions

Scintillation properties of $({\rm Zn}_{0.9} {\rm Pb}_{0.1})({\rm W}_{0.9} {\rm Mo}_{0.1}){\rm O}_4$ and $({\rm Zn}_{0.9} {\rm Cd}_{0.1})({\rm W}_{0.9} {\rm Mo}_{0.1}){\rm O}_4$ mixed crystals

Development on a new type of PbWO4 scintillation crystal

Influence of Trivalent Ions Codoping on the Mo:PbWO4 Luminescence Properties

Enhanced Thermal Stable Performance in Pr3+-doped Vanadate Phosphor by Inhibiting Intervalence Charge Transfer Quenching Channel