Abstract:Gallium oxide is a wide-bandgap semiconductor material which is being developed for a range of electronic and electrooptic device applications. Commercial implementation of these devices will require production-scale technology for Ga2O3 film deposition. This work demonstrated deposition of uniform Ga2O3 films on both 50-mm-diameter (0001) sapphire and 200-mm-diameter (100) silicon substrates, using a rotating disc metalorganic chemical vapor deposition reactor. The source reactants were trimethylgallium and oxygen. The resulting Ga2O3 films were smooth, optically transparent, and highly insulating and had excellent thickness uniformity. Ga2O3 films deposited on (0001) sapphire at temperatures of at least 600°C and pressures of at least 45 Torr consisted of (2¯01\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$\overline{ 2} 0 1$$\end{document})-oriented β-Ga2O3 in the as-deposited state. The β-crystal structure was shown to be stable on annealing to 800°C, in either air or nitrogen atmosphere. A Ga2O3 film deposited at a lower temperature was shown to crystallize to a similar (2¯01\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$\overline{ 2} 0 1$$\end{document})-oriented β-Ga2O3 structure on postdeposition annealing at 800°C.

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