Temperature Dependence of Photovoltaic Effect in La0.7Sr0.3MnO3/Si Heterostructure

K. X. Jin,S. G. Zhao,X. Y. Tan,C. L. Chen
DOI: https://doi.org/10.1016/j.matlet.2008.07.049
IF: 3
2008-01-01
Materials Letters
Abstract:The photovoltaic effect and good rectifying behavior have been observed in a heterostructure fabricated by depositing the La0.7Sr0.3MnO3 film on a Si substrate. The photovoltages increase quickly to the maximum values at about 266μs and then decrease gradually. The maximum photovoltage is about 0.220V at T = 90K. The maximum photovoltages decrease with increasing the temperature, which is attributed to the stronger thermal fluctuation. A local minimum in the photovoltages–temperature curve is observed at T = 143K, which is consistent with the metal-insulator transition temperature, and this might be caused by the thinner thickness of the depletion layer due to a change in the band structure of the LSMO layer. This result indicates that the photovoltaic effect of the manganite-based heterostructure can be changed by the intrinsic phase transition.
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