Light-induced transverse thermoelectric effect in MOCVD-deposited La1−xSrxMnO3 (0.08 ≤ x ≤ 0.7) thin films with inclined structure
Jiayuan He,Bowan Tao,Ruipeng Zhao,Xi Chen,Kai Yang,Yi Song,Chang Wei,Zhenzhe Li,Tian Xie,Yuhang Yu,Guoliang Ming,Yudong Xia
DOI: https://doi.org/10.1007/s10854-024-12150-1
2024-02-23
Journal of Materials Science Materials in Electronics
Abstract:Usually, modulating electrical transport properties is a vital means to improve the light-induced transverse thermoelectric (LITT) effect. The manganese perovskite-type oxides La 1−x A x MnO 3 ( A = Ca, Sr, etc.) are typical materials with the LITT effect. However, much attention is paid to La 1−x Ca x MnO 3 , and few studies focus on low-resistivity La 1−x Sr x MnO 3 . In this work, the La 1−x Sr x MnO 3 (0.08 ≤ Sr ≤ 0.7) thin films with inclined structures are prepared based on the metal-organic chemical vapor deposition (MOVCD) method. The XRD and TEM results indicate that La 1−x Sr x MnO 3 (0.08 ≤ Sr ≤ 0.7) thin films feature high c -axis orientation and good biaxial textures. Adjusting Sr content modulates the electrical transport properties of the thin films, the response voltage is significantly improved. Especially, the lowest resistivity of 0.2 × 10 −2 Ω·cm is achieved in La 0.7 Sr 0.3 MnO 3 thin film, thus achieving a fast response time of 24 ns upon the irradiation of a 248 nm pulse laser, significantly lower than most literature results for La 1−x Ca x MnO 3 . This work demonstrates the potential of La 1−x Sr x MnO 3 in ultraviolet pulse laser detectors.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied