Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Germania/ormosil hybrid materials derived at low temperature for photonic applications

Optical Properties of Highly Photosensitive Hybrid Sol-Gel Films

Thermo-optic Properties of Sol-Gel-fabricated Organic–inorganic Hybrid Waveguides

Optical Isomerization and Photo-Patternable Properties of GeO2/Ormosils Organic-Inorganic Composite Films Doped with Azobenzene

Waveguide Properties Of Tio2/Ormosil Composite Thin Films Prepared By Sol-Gel Processing On Iii-V Compound Semiconductor Substrates

Synthesis And Characterization Of Polyimide/Silica Hybrid Waveguide Materials Via Sol-Gel Technique

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Direct Writing of Buried Waveguides in Hybrid Organic-Inorganic Sol-Gel by Femtosecond Laser Pulses

Preparation, Morphological and Thermal Stability of Polyimide/Silica Hybrid Material Containing Dye Nbdpa

Sol-gel Preparation of a Silica Antireflective Coating with Enhanced Hydrophobicity and Optical Stability in Vacuum

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Synthesis in situ, characterization, and photostability of europium beta-diketone chelates in organically modified silicates (ORMOSILs)

The preparation of silica-based SiO2-ZrO2 films as waveguides by sol-gel process

High Refractive Organic–Inorganic Hybrid Films Prepared by Low Water Sol-Gel and UV-Irradiation Processes

Organic–inorganic hybrid silica systems: synthesis strategies and optical applications

Polyimide/silica/titania Nanohybrids Via a Novel Non-Hydrolytic Sol–gel Route

The Performance of Dye-Doped Zirconia-ORMOSILs Films

Sol-Gel Derived Hybrid Materials Containing C-60 and Their Optical Limiting Effects

Hybrid Materials Covalently Incorporated with Isophorone-Based Dyes Through Sol-Gel Process for Nonlinear Optical Applications

Microstructure and Properties of Organosoluble Polyimide/silica Hybrid Films

Study of Nonlinear Optical Fluorine-Containing Polyimide/silica Hybrid Waveguide Nanomaterial