Abstract:Recently, a monolithic integration of optics and electronics in a single Si chip has attracted a great deal of attention due to its attractive application prospects: the potential for forming high speeded information processing and transmission, and inexpensive and low power silicon chip. Developing high-efficiency silicon-based light sources is the main task in silicon photonics. In the present paper the authors explore a potential way for silicon-based light-emitting application. A Mn(2+)-activated silicon-rich silicon oxide (SiO2 : Si : Mn2+) film was prepared on the n(+)-type silicon substrate using co-sputtering technique followed by doping and activation of Mn with a thermal diffusion method. High-resolution transmission electronic microscope study shows that the film is embedded with 3-5 nm silicon nanocrystals. Bright green photoluminescence (PL) from the film was observed under ultraviolet radiation and peaked at 524 nm (2.36 eV), the decay time of which is 0.8 ms. It is generally believed that the green radiation originates from 4T1 --> 6A1 transition in Mn2+. The PL excitation spectrum of the film, monitored at 524 nm, has a peak of 254 nm, similar to that of the Zn2 SiO4 : Mn film. It is believed that the strong 254 nm absorption is attributed to Mn2+ --> Mn3+ ionization or ds --> d4s transition. A very broad electroluminescence spectrum ranging from 400 to 800 nm, covering almost the whole visible band, was observed from the device made of the SiO2 : Si : Mn2+ film at low reverse biases. The threshold voltage of the device is as low as 5 V. Spectra of the device demonstrate that the electroluminescence is attributed to Mn2+ and luminescence centers in the Si-rich SiO2 film. The authors interpret that Mn2+ excitation is mainly due to direct impact excitation of hot electrons, silicon nanocrystals in the SiO2 film help electrons tunnel from a silicon nanocrystal to an adjacent one, and are advantageous for generating hot electrons to excite Mn2+.

Fabrication and characterization of Mn-doped zinc silicate films on silicon wafer

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

Enhanced photocatalytic activity of Mg 0.05 Zn 0.95 O thin films prepared by sol–gel method through a cycle

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Sol-gel preparation and phosphorescence property of Mn 2+ -doped zinc borosilicate glass thin films

Effect of Magnesium Doping on the Light-Induced Hydrophilicity of Zno Thin Films

Photoluminescent Zinc Silicate Films Prepared on Silicon Wafer by Solid-Phase Reaction

Structural Characterization and Photoluminescent Properties of Zn 1- X Mg X O Films on Silicon

Characteristics of Znmgo Thin Films Prepared by the Sol-Gel Method

Structural Characterization and Photoluminescent Properties of Zn1-Xmgxo Films on Silicon

Emission from a Planar Structured Electroluminescent Device on Silicon Wafer

Preparation and luminescent properties of Zn2SiO 4:Mn2+

Cubic MgxZn1−xO Films Grown on SiO2 Substrates

Electroluminescence from a Mn2+ Activated SiO2:Si Film on N+-Si Substrate

Effect of Substrate Temperature on the Properties of Zn1-Xmgxo Films on Silicon

Preparation and Luminescent Properties of Zn<sub>2</sub>SiO<sub>4</sub>:Mn<sup>2+</sup>

Characterization of MgxZn1−xO Thin Films Prepared by Sol–gel Dip Coating

Optical properties of Mg x Zn 1−x O thin films deposited on silicon and sapphire substrate by rf magnetron sputtering

One-dimensional rice-like Mn-doped Zn2SiO4: Preparation, characterization, luminescent properties and its stability

Structural and Photoluminescence Analysis of Mn-doped ZnO Thin Films