Abstract:Preparing high-quality AlN films at low temperatures is always highly demanded in plenty of application-fields, despite the high temperature is always necessary to enable the AlN crystallization. Therefore, improving the structural properties at low temperature is still challenging in the field. In the present work, the metal organic chemical vapor deposition (MOCVD) grown AlN nucleation layer is employed to improve the crystallinity and morphology of sputtered AlN on 6-inch Si (111) substrate at the temperature even as low as 100°C where it is not principally possible to achieve the crystallization of sputtered AlN. When compared with the as-sputtered AlN prepared even at 650°C, it is found that the full width at half maximum (FWHM) of AlN (002) X-ray rocking curves is intensively decreased to 0.96° from 1.61°, and such a reduction indicates that the screw dislocation density is decreased from 7.31×1010 down to 2.14×1010/cm2. In addition to the crystallinity, the morphology is also obviously improved that the root-mean-square (RMS) roughness is reduced from 4.99 nm down to 0.83 nm in a scanned area of 3×3 μm2 through introducing AlN nucleation. Therefore, such a combination highlights the contribution of AlN nucleation grown by MOCVD in improving the structural properties of low-temperature sputtered AlN layer which is compatible with the manufacturing of Si integrated circuits.

Relationship between appearance crystalline planes and growth temperatures during sublimation growth of AlN crystals

Growth Habit Plane and Morphologies of Aluminum Nitride Crystals

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

Helical Growth of Aluminum Nitride: New Insights into Its Growth Habit from Nanostructures to Single Crystals

The sublimation growth of AlN fibers: transformations in morphology & fiber direction

Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Growth of aluminium nitride whiskers by sublimation-recrystallization method

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Low Temperature Growth of Reactive Partially Ionized Beam Deposited AlN Films

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures

The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on Sic (0001) Substrates

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.