Abstract:Wide bandgap semiconductor nanostructures have been the research focus in recent years because of their unique physical and chemical properties and low electron affinity, which benefits for tunnel emission (Geis et al., 1991; Zhirnov et al., 1997; Kang et al., 2001; Liu et al., 2009). Among them, AlN nanostructures should deserve paid much attention due to their high melting-point (> 2300 oC), high thermal conductivity (K ~ 320 W/m·k), large exciton binding energy and strong endurance to harsh environment (Davis, 1991; Nicolaescu et al., 1994; Sheppard et al., 1990; Ponthieu et al., 1991). There have emerged many synthesis methods to fabricate different morphology of AlN nanostructures, such as nanocone, nanorod, and nanorods (Liu et al., 2009; Zhao et al., 2004; Liu et al., 2004; Tang et al., 2005; Shi et al., 2005, 2006; Wu et al., 2003; Paul et al., 2008). But for actual device applications of AlN nanostructures, there still exist many technique questions, which need to be solved as soon as possible. Firstly, the controlled growth of large area AlN nanostructures with uniform morphology is very difficult because of which cares about the uniformity of their physical properties in devices. Secondly, systemic investigation on the field emission (FE) properties of AlN nanostructures is not enough, which has fallen behind the development of the preparing method. Thirdly, it is unknown to us all that what factors take effect on their FE behaviors and how to find optimal growth conditions for their device applications. So developing a suitable way to controllably prepare AlN nanostructures and investigate on their FE properties in detail is essential for promoting their progress in FE area.

The sublimation growth of AlN fibers: transformations in morphology & fiber direction

Growth of AlN Nanobelts, Nanorings and Branched Nanostructures

Role of Ni in the Controlled Growth of Single Crystal AlN Triangular Microfibers: Morphology Evolvement, Growth Kinetics and Photoluminescence

Helical Growth of Aluminum Nitride: New Insights into Its Growth Habit from Nanostructures to Single Crystals

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

Effect of nitriding atmosphere on the morphology of AlN nanofibers from solution blow spinning

Large-scale AlN Nanowires Synthesized by Direct Sublimation Method

Growth of aluminium nitride whiskers by sublimation-recrystallization method

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

Controlled synthesis of ultra-long AlN nanowires in different densities and in situ investigation of the physical properties of an individual AlN nanowire.

Growth and Microstructure of Aln Whiskers and Dendrites

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

P2&#x2013;24: Controlled Growth of Ultra-Long AlN Nanowire Arrays in Different Density and Investigation of Their Emission Behaviors

(Invited) Growth, Optical, and Mechanical Properties Investigations of AlN Nanowires and Nanohelices

The Controlled Growth of Long AlN Nanorods and In-situ Investigation on Their Field Emission Properties

Synthesis and Optical Property of High Purity Aln Nanowires

The Growth Mechanism of Monocrystal Aluminum Nitride Nanowires at Low Temperature

Morphologies and Growth Mechanisms of Aluminum Nitride Whiskers Synthesized by Carbothermal Reduction

Thermal Environment Evolution and Its Impact on Vapor Deposition in Large Diameter AlN Bulk Growth

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere