High-precision and high-speed etching of diamond surfaces using Fe–Ni alloy catalyzed H–O plasma etching
Dongyue Wen,Yicun Li,Jiwen Zhao,Xiaobin Hao,Sen Zhang,Benjian Liu,Yumin Zhang,Viktor Ralchenko,Bing Dai,Jiaqi Zhu
DOI: https://doi.org/10.1016/j.carbon.2023.118733
IF: 10.9
2023-12-16
Carbon
Abstract:Power devices with low losses are essential for achieving high-efficiency, low-cost, and miniaturized inverters and advance electronic technologies. Recently, diamond-based p-type groove semiconductor field-effect transistors have emerged as a hot research topic. Conventional method of fabricating surface grooves using inductively coupled plasma etching is costly and relatively slow. Here, we realized a novel diamond machining method using Fe–Ni alloy catalyzed H–O microwave plasma etching that can achieve high-rate and high-precision etching of diamond surfaces. Two major factors affecting the etching rate and pattern accuracy, wettability of diamond and carbon solubility with liquid metal, were identified. Oxygen added in H 2 plasma allows the wetting increase, resulting in an improvement in uniformity of the etch area, while keeping the etch rate as high as 3 μm/min. The developed approached is promising for low-cost diamond patterning in electronic devices fabrication processes.
materials science, multidisciplinary,chemistry, physical