Design and Process Implement of EO Modulator Based on the Dual-Slot Structure

XIE Jing-ya,ZHOU Lin-jie,LI Xin-wan,SUN Xiao-meng,CHEN Jian-ping

DOI: https://doi.org/10.3969/j.issn.1672-3392.2011.05.008

2011-01-01

Abstract:With the development of microelectronics,metal interconnect has become the major limitation for the further improvement of the integrated circuits performance,due to the relatively low bandwidth,high delay and large power consumption of metal wires.Optical interconnect is one of the feasible solution for the next generation integrated circuits.Optical modulator,as a basic building block for optical interconnect,has attracted much research interest in recent years.In this paper, we propose a novel dual-slot silicon electro-optic modulator,consisting of a Fabry-Perot microresonator in a waveguide. The modulation is enabled by using the high linear electro-optic effect in the polymer material filled in the slots.To reduce the mode conversion loss and to simplify the electrode design,a mode converter is used to connect the regular silicon ridge waveguide to the dual-slot waveguide.The device performances are analyzed using numerical simulations and optimum design parameters are given.We also present the preliminary fabrication results for the device with SEM images showing that waveguide width,etch depth and side wall roughness can be well controlled using CMOS fabrication facilities.