Influence of Al Doping on the Structural, Optical, and Electrical Characteristics of ZnMn2O4
Zein K. Heiba,M. M. Ghannam,Mohamed Bakr Mohamed,Moustafa M. S. Sanad,A M El naggar,Abdallah A. Shaltout
DOI: https://doi.org/10.1149/2162-8777/ad28ca
IF: 2.2
2024-02-14
ECS Journal of Solid State Science and Technology
Abstract:Doped zinc manganite samples were synthesized using the sol-gel method, incorporating varying amounts of aluminum (ZnMn2-xAlxO4, x = 0, 0.03, 0.05, 0.07, 0.1). High-quality X-ray diffraction data enabled detection and accurate quantification of the predominant phase ZnMn2O4 (ZMO) and minor phase ZnO. The structure and microstructure of developed phases were investigated applying the Rietveld refinement method. The nanoscale nature of the samples was examined by High-resolution transmission electron microscopy. The incorporation of Al into the ZMO matrix and the oxidation states of various cations were studied through X-ray photoelectron spectroscopy. The introduction of Al resulted in a modification of the light-absorption characteristics of the ZMO sample. Specifically, the direct optical band gap energy of ZMO decreased from 2.45 to 2.25 eV with an increase in the amount of Al doping to 0.1. Moreover, an investigation was conducted into the impact of Al doping amount, frequency, and temperature on the dielectric constant, dielectric tangent loss, ac conductivity, complex impedance, and complex electric modulus. It was observed that all samples, except for the sample with x = 0.05, exhibited ferroelectric features.
materials science, multidisciplinary,physics, applied