Effect of A-Site Bi-Doping on the Magnetic and Electrical Properties in Tbmno3

Chao Zhang,Haitao Yan,Xiaofei Wang,Dawei Kang,Liben Li,Xiaomei Lu,Jinsong Zhu
DOI: https://doi.org/10.1016/j.matlet.2013.08.068
IF: 3
2013-01-01
Materials Letters
Abstract:Bi doped TbMnO3 ceramics have been synthesized by solid state reaction, and the effect of substitution in TbMnO3 on the structural, magnetic and dielectric properties is investigated. The X-ray diffraction pattern shows that the samples have an orthorhombic structure. The Bi substitution is found to suppresses the Tb-spin ordering point (TTb) and ferroelectric ordering point (TC), which attributed to the strength reduction in the exchange interactions JTb–Tb and JMn–Tb. In addition, a dielectric relaxation with an activation energy of ~20meV is observed at low temperature in Tb1−xBixMnO3, and the relaxorlike dielectric characteristics may be attributed to the dipolar effects induced by charge carrier hopping motions.
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