Abstract:Recently much attention has been paid to short wavelength lasers for use in high density information storage. It is widely accepted that ZnO is one of the most promising materials for producing an ultraviolet laser at room temperature due to its wide direct band gap (E_g=3.37 eV) and large excitonic binding energy of 60 meV. It has potential uses in optoelectronical systems such as light emitting diodes(LEDs), photodetectors, electroluminecence devices and solar cells. To obtain high quality ZnO thin films a variety of techniques may be used such as molecular beam epitaxy(MBE), metal organic chemical vapor deposition(MOCVD), magnetron sputtering, pulsed laser deposition, and so on. Among them, MOCVD provides the advantage of growing high-quality films due to its versatility in controlling the various thermodynamic interactions. ZnO has not only the same crystal structure as GaN, but also a larger exciton binding energy of 60 meV, which is 2.4 times that of GaN. This indicates that ZnO should be the most potential material to realize the next generation UV semiconductor laser. High quality ZnO films were deposited on c-Al_2O_3 substrate by the plasma-assisted metal-organic chemical vapor deposition. Strong optically pumped ultraviolet (UV) emission was observed. PL spectra under different excitation powers were performed. The PL intensity as a function of the excitation power, it is obvious that the PL intensity is linearly dependent on the excitation power. This indicates that the dominant photoluminescence of the sample should be the excitonic radiative recombination at room temperature.Optically pumped UV lasing spectrum of ZnO film was observed. The samples were optically pumped by a frequency-tripled mode-locked Nd∶YAG laser 355 nm emission, with 10 Hz repetition rate, and 15 ps pulse width. The pump beam was focused to a spot with diameter of about 25 μm on the surface of ZnO film. The threshold of lasing was as low as 0.28 μJ. From the lasing spectrum, we could find that the lasing peak has much narrow line-width less than 0.03 nm. In this paper, high quality ZnO films were grown on c-Al_2O_3 by MOCVD. Optimized growth condition was obtained by XRD and PL measurements. ZnO films were strongly c-oriented from XRD measurement. Optically pumped UV lasing was observed in all kinds of directions at room temperature. This was due to the self-formed resonance cavities.

Stimulated ultraviolet emission from ZnO films annealed at high temperature

Enhanced Visible Light Response of ZnO Porous Thin Film by Post-Annealing Treatment

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Optically Pumped Ultraviolet Lasing Property of ZnO Film

Optically and Electrically Pumped Random Lasing from ZnO Films Annealed at Different Temperatures

Photoluminescence and Optically Pumped Ultraviolet Lasing from Nanocrystalline ZnO Thin Films Prepared by Thermal Oxidation of High-Quality ZnS Thin Films

Thermal-desorption Induced Enhancement and Patterning of Ultraviolet Emission in Chemically Grown ZnO

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn

Enhancement And Patterning Of Ultraviolet Emission In Zno With An Electron Beam

Electrically Pumped ZnO Film Ultraviolet Random Lasers on Silicon Substrate

Study on the annealed ZnO films grown by plasma-assisted MOCVD

Electrically Pumped Wavelength-Tunable Blue Random Lasing from Cdzno Films on Silicon

Influences of Annealing on the Opto-electronic Properties of ZnO Films Grown by Plasma-Enhanced MOCVD

Deep ultraviolet emission of ZnO films prepared by RF magnetron sputtering at changing substrate temperature

Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

Stimulated emission from ZnO thin films with high optical gain and low loss

Nanosecond-laser annealing of zinc oxide thin-films: The effect of the laser wavelength and fluence

Molecular dynamics simulations and photoluminescence measurements of annealed ZnO surfaces