Raman investigation of incident N-, Xe-ions induced effects in ZnO thin films

Wang Zhiguang,Zang Hang,Wei Kongfang,Sun Jianrong,Yao Cunfeng,Shen Tielong,Ma Yizhun,Pang Lilong,Zhu Yabin
DOI: https://doi.org/10.1016/j.nimb.2010.12.084
2011-01-01
Abstract:Highly c-axis orientation ZnO thin films with hundreds nanometers in thickness have been deposited on (100) Si substrate by RF magnetron sputtering. These films are implanted at room temperature by 80keVN-ions with fluences from 5.0×1014 to 1.0×1017ions/cm2, implanted by 400keV Xe-ions with 2.0×1014 to 2.0×1016ions/cm2, irradiated by 3.64MeV Xe-ions with 1.0×1012 to 1.0×1015ions/cm2, or irradiated by 308MeV Xe-ions with 1.0×1012 to 5.0×1014ions/cm2, respectively. Then the ZnO films are investigated using a Raman spectroscopy. The obtained Raman spectra show that a new Raman peak located at about 578cm−1 relating to simple defects or disorder phase appears in all ZnO films after ion implantation/irradiation, a new Raman peak at about 275cm–1 owing to N-activated zinc-like vibrations is observed in the N-implanted samples. Moreover, a new Raman peak at about 475cm−1 is only seen in the samples after 400keV and 3.64MeV Xe-ions bombardment. The area intensity of these peaks increases with increasing ion fluence. The effects of ion fluence, element chemical activity, atom displacements induced by nuclear collisions as well as energy deposition on the damage process of ZnO films under ion implantation/irradiation are discussed briefly.
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