Investigation of structural and optical properties of ZnTiO 3 thin films irradiated with 50 MeV oxygen ions
Priya Mittal,Komal Shekhawat,Deepak Negi,Radhe Shyam,Sanjay Kumar Kedia,Fouran Singh,Pukhraj Prajapat,Govind Gupta,M. Durga Ganesh,Subingya Pandey,Pamu Dobbidi,Srinivasa Rao Nelamarri
DOI: https://doi.org/10.1016/j.radphyschem.2024.111938
IF: 2.776
2024-06-21
Radiation Physics and Chemistry
Abstract:This paper aims to investigate the effects of high-energy ion irradiation on the structural, morphological, optical, and luminescent characteristics of ZnTiO 3 (ZTO) films. ZTO films were grown on silicon and quartz substrates via RF magnetron sputtering in pure argon ambiance and annealed at 800 °C for crystallization. The annealed (pristine) samples were irradiated with 50 MeV oxygen ions at three distinct fluences: 1 × 10 12 , 5 × 10 12 , and 1 × 10 13 ions/cm 2 . X-ray diffraction (XRD) data demonstrates that the intensity of highly oriented (311) peak first increases with fluence up to 5 × 10 12 and then decreases at 1 × 10 13 ions/cm 2 . The root mean square roughness (RMS) increases initially from 8.22 (pristine) to 9.10 nm (1 × 10 12 ions/cm 2 ) and decreases to 8.25 nm for 1 × 10 13 ions/cm 2 fluence. Transmittance spectra indicate an enhancement in the transmission of irradiated films. The calculated band gap of pristine and irradiated films lies in the range of 3.93–3.84 eV. X-ray photoelectron spectroscopy (XPS) analysis reveals a reduction in oxygen vacancies up to a fluence of 5 × 10 12 and then rises at 1 × 10 13 ions/cm 2 . The enhancement of peak intensity is observed in photoluminescence (PL) spectra on increasing the ion fluence due to a reduction in the non-radiative recombination centers.
chemistry, physical,physics, atomic, molecular & chemical,nuclear science & technology