Abstract:This paper deals with the fabrication of an inductorless wideband low-noise amplifier (LNA). The LNA includes two branches in parallel: a common-source (CS) path and a common-gate (CG) path. The CS path is responsible for providing enough power gain, while the CG path is used to achieve the input impedance matching. To eliminate the noise contribution of the CG path, the noise cancellation technique is applied. Therefore, the overall noise figure (NF) is improved. The phase mismatch between the two paths is also quantitatively analyzed to investigate its effect on gain and NF. The analytical results agree well with the simulation results. The LNA has been fabricated by a commercial 0.18-mu m CMOS process. The measurement results show that the LNA has achieved a maximum gain of 14.5 dB with 1.7-GHz 3-dB gain bandwidth and a minimum NF of 3 dB. The tested input 1-dB gain compression point (IP1 dB) is -10.4 dBm at 1 GHz and the input third-order intercept point is 0.25 dBm. With 1.8-V supply, the LNA draws only 6-mA dc current.

3～10 GHz UWB LNA with notch characteristics to suppress in-band interference

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Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

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A 22-40.5 GHz UWB LNA Design in 0.15um GaAs.

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An Inductor-Less Highly Linear LNA with Noise Cancelling and Current Reusing for 3–5 GHz Low-Power UWB Receivers

A 3-10 Ghz Uwb Lna Using G(M)-Boosting Structure And Inductive-Peaking-Based Bandwidth Extension Technique In A 180 Nm Cmos Technology

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Compact Uwb Antenna with Multiple Band-Notches for Wimax and Wlan

3～10 GHz UWB LNA with notch characteristics to suppress in-band interference

3-10 GHz self-biased resistive-feedback lna with inductive source degeneration

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

Analysis And Design Of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

A fully-integrated low-power 3.1-10.6GHz UWB LNA in 0.18μm CMOS

A 0.08&amp;#x2013;3ghz High Gain UWB LNA with Improved Flatness

Simulation design of a low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers

Design Of Double-Notch Ultra-Wideband Antenna

A 22-40.5 GHz UWB LNA Design in 0.15um GaAs.

A 0.18 μm CMOS 3–5GHz switched gain low noise amplifier for UWB system

Low Power 0.18µm CMOS Ultra Wideband Inductor-Less LNA Design for UWB Receiver

Low Power 0.18&amp;#x00b5;m CMOS Ultra Wideband Inductor-Less LNA Design for UWB Receiver

3-10 GHz Ultra-Wideband LNA with Continuously Variable Gain for Wireless Communication

A 2.4 mW, 11.7±0.4dB, 3 to 5 GHz wide-band LNA for super-regenerative IR-UWB receiver

Design of Ultra-Wideband LNA with 3.6 ± 0.4 Db NF and 15.9 ± 1.1 Db Gain

A Novel CMOS Low-Noise Amplifier Design for 3.1- to 10.6-Ghz Ultra-Wide-band Wireless Receivers

An Inductor-Less Highly Linear LNA with Noise Cancelling and Current Reusing for 3–5 GHz Low-Power UWB Receivers

A 3-10 Ghz Uwb Lna Using G(M)-Boosting Structure And Inductive-Peaking-Based Bandwidth Extension Technique In A 180 Nm Cmos Technology

3–10 GHz, 6.54‐mw CMOS Ultrawideband Low‐noise Amplifier Using a Hybrid Structure

Analysis And Design Of A Cmos Low Noise Amplifier For 3-5 Ghz Uwb Systems

Compact Uwb Antenna with Multiple Band-Notches for Wimax and Wlan

A 0.08–3ghz High Gain UWB LNA with Improved Flatness

Low Power 0.18µm CMOS Ultra Wideband Inductor-Less LNA Design for UWB Receiver