Abstract:Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures. Among these compounds, InAs/GaSb type II superlattices represents the most commonly studied materials. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. InAs/GaSb superlattices is a type II disconnected band structure with electrons and holes confined in the InAs and GaSb layers, respectively. The electron micro-band and hole micro-band can be regulated separately by adjusting the InAs and GaSb layers, which facilitates the design of superlattice structures and maximizes the amount of energy band offset. These works constituted a theoretical basis for the effective utilization of the InAs/GaSb system in material optimization and designing new SL structures; they also provided an opportunity for the preparation and rapid development of InAs/GaSb T2SLs. In this paper, we systematically review several widely used methods for simulating superlattice band structures, including the kp perturbation method, envelope function approximation, empirical pseudopotential method, empirical tight-binding method, and first-principles calculations. With the limitations of different theoretical methods proposed, the simulation methods have been modified and developed to obtain reliable InAs/GaSb SL energy band calculation results. The objective of this work is to provide a reference for designing InAs/GaSb type II superlattice band structures.

Band structure calculation of InAs/GaSb superlattice under 4 layers model

Simulation of the band structure of InAs/GaSb type II superlattices utilizing multiple energy band theories

Modeling and Simulation of Inas/Gasb Type-Ii Superlattices with Different Interface Layers

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

First-Principles Study of Interface Relaxation Effect on Interface and Electronic Structures of Inas/Gasb Superlattices with Different Interface Types

The Effect of Sb Content in InAs1-xSbx/GaSb Type-II Superlattices

Band-Gap Corrected Density Functional Theory Calculations For Inas/Gasb Type Ii Superlattices

Structure and Electrical Properties of InAs/GaInSb Superlattice Film

X-Ray Diffraction Analysis of High Quality Inas/Gasb Type Ii Superlattices Grown by Mbe

The Interface Structure of InAs/GaInSb Strained-Layer Superlattice

Long-Period InAs/GaSb Type-II Superlattices for Terahertz Application

Interfacial Structure of InAs/Ga1−xInxSb Superlattices

Electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices and their application to far-infrared detectors

Interface Layers in In0.532ga0.468as/Inp Superlattices

Photo-excited Carrier Density in Short-Period InAs/GaSb Type-Ii Superlattice

Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

Electronic band structure engineering in InAs/InSbAs and InSb/InSbAs superlattice heterostructures

Electronic states in GaAs/AlAs lateral-surface superlattices

Effects of stacking periodicity on the electronic and optical properties of GaAs/AlAs superlattice: a first-principles study

Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy

First-principles study of structural stability and electronic properties of Sb/GaSb(111) semimetal–semiconductor superlattice